In this study, the plasma resonance in a surface wave sustained plasma was investigated. Surface wave discharges have been successfully generated by a microwave planar vane-type slow wave structure. Experimental results clearly demonstrated that the amplitude of the electric field of the microwave always became a local maximum in the position where the plasma density was equal to the same value. When the operating gas pressure and the input microwave power were varied to change the plasma density profile, the location of the maximum of the electric field was found to shift in compliance with the plasma density profile. Meanwhile, the peak of the resonance response was found to be proportional to the plasma density gradient while the spatial width of plasma resonance was inversely proportional to the plasma density gradient. These results were qualitatively in accordance with the theory.

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A diamond-like carbon (DLC) and silicon carbide (SiC) composite tip structure was successfully deposited on an oblique-cut Si(111) substrate of terrace width less than 21.1 Å. The DLC morphology depended on the Si(111) terrace width in the oblique-cut Si(111) surface. A continuous and dense DLC film started to form on the Si(111) substrate of terrace width higher than 27.8 Å. The density of the DLC/SiC composite tip also depended on the terrace width. The DLC films on the Si(111) with or without oblique cut had about the same Raman characteristics regardless of their different morphologies. The formation mechanism of the DLC/SiC tip structure was discussed.

Particle generation and thin film surface morphology in the tetraethylorthosilicate/oxygen plasma enhanced chemical vapor deposition process In this study a planar large-area microwave plasma source is used to grow diamond films at low gas pressure. This plasma source is based on the excitation of plasma surface waves so that overdense plasmas can be generated. Above all, this plasma source is easy to scale up. For admixture of CH 4 /H 2 gas, radical information and characteristics of the plasma are carefully characterized at low pressure. Some features different from those at high pressure are observed. A three-step process for diamond growth in the planar microwave plasma chemical vapor deposition system has been developed. High nucleation density can be achieved as a result. At a low pressure of 0.2 Torr, diamond films can be successfully deposited on a 4-in. Si͑100͒ wafer, exhibiting a large amount of non-sp 3 bonding. The effects of plasma properties on the diamond film are addressed.