Deposition of diamond films at low pressure in a planar large-area microwave surface wave plasma source

Abstract

Particle generation and thin film surface morphology in the tetraethylorthosilicate/oxygen plasma enhanced chemical vapor deposition process In this study a planar large-area microwave plasma source is used to grow diamond films at low gas pressure. This plasma source is based on the excitation of plasma surface waves so that overdense plasmas can be generated. Above all, this plasma source is easy to scale up. For admixture of CH 4 /H 2 gas, radical information and characteristics of the plasma are carefully characterized at low pressure. Some features different from those at high pressure are observed. A three-step process for diamond growth in the planar microwave plasma chemical vapor deposition system has been developed. High nucleation density can be achieved as a result. At a low pressure of 0.2 Torr, diamond films can be successfully deposited on a 4-in. Si͑100͒ wafer, exhibiting a large amount of non-sp 3 bonding. The effects of plasma properties on the diamond film are addressed.

Field emission from amorphous-carbon nanotips on copper

“…Details about the planar MPECVD system can be found in the literature. 20,21 Before the deposition of a-C, the chamber was first pumped to a base pressure of 5ϫ10 Ϫ3 Torr, and H 2 /CH 4 with a flow rate of 47/14 sccm was fed into the chamber to ignite the H 2 /CH 4 mixed plasma operated at 3000 W and 0.14 Torr. The a-C was then deposited onto the copper substrates at different bias voltages for 2 h at 200°C.…”

Plasma Deposition of Diamond at Low Pressures: A Review

“…The results confirm that high radical fluxes are essential for the deposition under low-energy ion bombardment. Surface-wave excited plasma (SWP) has recently been used in a few studies [41]- [43]. The primary merit of SWP is its potential to enlarge the deposition area by adjusting an arrangement of slot antennas and a dielectric window.…”