Bias-enhanced nucleation of diamond on silicon dioxide

Irwin, Mark; Pantano, Carlo G.; Gluche, P.; Kohn, E.

doi:10.1063/1.119839

Cited by 23 publications

(5 citation statements)

References 13 publications

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“…Monocrystalline diamond substrates induce homoepitaxial crystalline films, whereas non-diamond and PCD substrates result in the growth of PCD films. For non-diamond substrates, a nucleation procedure is necessary to produce the diamond precursors, namely: (1) surface abrasion with diamond particles to insert them on the substrate's surface [72][73][74], (2) sonication of diamond powder loaded solution [75], (3) bias enhanced nucleation (BEN) [76][77][78],where C = ions and CHx = (x = 1, 2, 3) from a plasma, created in front of the substrate surface, are accelerated, with very low energy, towards the surface, getting implanted on the surface and inducing the seeding process, (4) spinning of diamond-powder-loaded photoresist (DPR) [79], and (5) spraying of diamond-loaded fluids [80,81] on the substrate surface. All substrate's surfaces seeding processes, described above, are applied to grown diamond films by different methods, as summarized in Table 6 [82].…”

Section: Chemical Vapor Deposition Of Pcd Filmsmentioning

confidence: 99%

Review on advances in microcrystalline, nanocrystalline and ultrananocrystalline diamond films-based micro/nano-electromechanical systems technologies

Auciello

Aslam

2021

J Mater Sci

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A comprehensive review is presented on the advances achieved in past years on fundamental and applied materials science of diamond films and engineering to integrate them into new generations of microelectromechanical system (MEMS) and nanoelectromechanical systems (NEMS). Specifically, the review focuses on describing the fundamental science performed to develop thin film synthesis processes and the characterization of chemical, mechanical, tribological and electronic properties of microcrystalline diamond, nanocrystalline diamond and ultrananocrystalline diamond films technologies, and the research and development focused on the integration of the diamond films with other film-based materials. The review includes both theoretical and experimental work focused on optimizing the films synthesis and the resulting properties to achieve the best possible MEMS/NEMS devices performance to produce new generation of MEMS/NEMS external environmental sensors and energy generation devices, human body implantable biosensors and energy generation devices, electron field emission devices and many more MEMS/NEMS devices, to produce transformational positive impact on the way and quality of life of people worldwide.

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Section: Chemical Vapor Deposition Of Pcd Filmsmentioning

confidence: 99%

Review on advances in microcrystalline, nanocrystalline and ultrananocrystalline diamond films-based micro/nano-electromechanical systems technologies

Auciello

Aslam

2021

J Mater Sci

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“…Many techniques have been employed to start the initial nucleation, including scratching the substrate surface with abrasives, ultrasonic treatment of the substrate in a diamond powder slurry, bias-enhanced nucleation, carburization of substrate surface, diamond-loaded photoresist, spin-coating or spraying of diamond-loaded fluids, etc. [11][12][13][14][15][16][17][18][19][20][21]. A specially formulated nanodiamond dispersion called resorcinarene amine encapsulated microdiamant [22] was spin-coated on the wafer to achieve uniform seeding and dense distribution of nanodiamond particles over the entire wafer.…”

Section: Diamond Nucleationmentioning

confidence: 99%

Selective growth of nanodiamond films in microwave plasma

Albin

Williams

Zhou

et al. 2012

Composite Interfaces

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A patterned nanodiamond film is grown using microwave plasma-enhanced chemical vapor deposition. A selective growth method compatible with traditional silicon processing is described. A diamond pattern of high quality and moderate resolution is achieved. The process utilized is simple to generate patterns without etching diamond. A rectifying junction is demonstrated using a p-type nanodiamond and p-type silicon heterojunction with rectifying ratio of two orders of magnitude. This simple patterning technique could be applied in the fabrication of diamond electronic and mechanical devices and biological sensors. The plasma emission spectra indicate the presence of both CH and C 2 species, which are responsible for diamond growth. IntroductionAmong many methods employed for diamond film growth, chemical vapor deposition (CVD) using microwave (MW) plasma is quite popular due to several reasons. The well-confined plasma does not touch the reaction chamber walls and can be produced directly on the substrate. Hence, contamination in the grown films can be minimized unlike in hot filamentbased CVD. Indirect substrate heating is also achieved by the MW. Diamond films and coatings have found wide ranging applications in sensors [1], protective coatings [2], optical windows [3], and electronic and electrochemical devices [4]. Many such applications require patterning of diamond thin films. However, the unusual chemical inertness and hardness makes patterning of diamond quite difficult. Reactive ion etching is a common method for diamond patterning [5-8] that involves a reactive gas like SF 6 and a highly selective masking material such as gold. This process suffers from the problems of over etching and micro mask effect [9,10]. In this paper, we describe a novel method for selective growth of a nanodiamond film in a MW, which is compatible with conventional Si processing. A rectifying isotype junction is demonstrated using a p-type nanodiamond (p-NCD)/p-type silicon (p-Si) heterojunction diode with rectifying ratio of two orders of magnitude. Diamond patterns are achieved without dry etching.

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“…The nucleation of non-diamond substrates prior to chemical vapour deposition (CVD) of nanocrystalline (NCD) and ultra-nanocrystalline diamond (UNCD) films is crucial for creating smooth, homogenous and uniform thin films. Substrates can be treated to promote surface nucleation in a variety of ways [1][2][3] including mechanical or ultrasonic abrasion [4][5], biasenhanced nucleation [6][7] and diamond-containing-photoresist coating [8].…”

Section: Introductionmentioning

confidence: 99%

Electrospray Deposition of Diamond Nanoparticle Nucleation Layers for Subsequent CVD Diamond Growth

et al. 2009

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Nucleation is the rate-determining step in the initial stages of most chemical vapour deposition processes. In order to achieve uniform deposition of diamond thin films it is necessary to seed non-diamond substrates. Here we discuss a simple electrospray deposition technique for application of 5 nm diamond seed particles onto substrates of various sizes. The influence of selected parameters, such as experimental spatial arrangement and colloidal properties, are analysed in optimizing the method by optical and electron microscopy, both before and after nanocrystalline diamond deposition on the seed layer. The advantages and limitations of the electrospray method are highlighted in relation to other commonly exploited nucleation techniques.

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Bias-enhanced nucleation of diamond on silicon dioxide

Cited by 23 publications

References 13 publications

Review on advances in microcrystalline, nanocrystalline and ultrananocrystalline diamond films-based micro/nano-electromechanical systems technologies

Review on advances in microcrystalline, nanocrystalline and ultrananocrystalline diamond films-based micro/nano-electromechanical systems technologies

Selective growth of nanodiamond films in microwave plasma

Electrospray Deposition of Diamond Nanoparticle Nucleation Layers for Subsequent CVD Diamond Growth

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