Bias-induced doping engineering with ionic adsorbates on single-walled carbon nanotube thin film transistors

Yu, Woo Jong; Jeong, Se Young; Kim, Ki Kang; Kang, Bo Ram; Bae, Deg‐Hyo; Lee, Minbaek; Hong, Seunghun; Gaunkar, Sunanda Prabhu; Pribat, Didier; Perello, David; Yun, Minhee; Choi, Jae‐Young; Lee, Young Hee

doi:10.1088/1367-2630/10/11/113013

Cited by 4 publications

(1 citation statement)

References 33 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Single walled carbon nanotubes (SWCNTs) have electronic properties that enable superior device performance [4,5]. However, their practical application has problems because the SWCNTs are composed of metallic and p-type semiconducting tubes [6], which makes it difficult to develop 3 Address for correspondence: Department of Chemical and Biological Engineering, Korea University, Anam-dong, Seongbuk-gu, Seoul 136-701, Korea.…”

Section: Introductionmentioning

confidence: 99%

p–n hetero-junction diode arrays of p-type single walled carbon nanotubes and aligned n-type SnO₂nanowires

et al. 2012

View full text Add to dashboard Cite

p-n hetero-junction diode arrays were fabricated using specific direct techniques for the transfer of p-type single walled carbon nanotubes (SWCNTs) and aligned n-type SnO₂ nanowires (NWs) onto a patterned substrate surface. Their electronic and optoelectronic properties were characterized. Perpendicular crossings of the p- and the n-channels with each other were confirmed by transfer characteristics with respect to the bottom gate. The resulting diode showed a good rectifying behavior with a rectification ratio of over 10² at ±5 V, where the equivalent circuit model of a serially connected diode and resistor was used for analysis of the electrical properties. Both the forward and the reverse currents were observed to increase with the application of a positive gate bias, indicating an n-type gate dependence. Under a forward bias, the dominant contribution of the SnO₂ NW channel to the total resistance of the equivalent model is attributed to the n-type gate dependence since the resistance of the n-channel increased with a negative gate bias, resulting in the decrease of the forward current. Under a reverse bias, positive gate increased the concentration of valence electrons in the SWCNTs, enhancing direct tunneling to the conduction band of the SnO₂ NWs. High sensitivity to UV irradiation under the reverse bias was also demonstrated with a photosensitivity over 10², suggesting potential applicability of the hetero-junction diodes in optoelectronic devices.

show abstract

Section: Introductionmentioning

confidence: 99%

p–n hetero-junction diode arrays of p-type single walled carbon nanotubes and aligned n-type SnO₂nanowires

et al. 2012

View full text Add to dashboard Cite

show abstract

Adaptive Logic Circuits with Doping-Free Ambipolar Carbon Nanotube Transistors

et al. 2009

View full text Add to dashboard Cite

A CMOS-like inverter was integrated by using ambipolar carbon nanotube (CNT) transistors without doping. The ambipolar CNT transistors automatically configure themselves to play a role as an n-type or p-type transistor in a logic circuit depending on the supply voltage (V DD) and ground. A NOR (NAND) gate is adaptively converted to a NAND (NOR) gate. This adaptiveness of logic gates exhibiting two logic gate functions in a single logic circuit offers a new opportunity for designing logic circuits with high integration density for next generation applications.

show abstract

Anomalous Schottky Barriers and Contact Band-to-Band Tunneling in Carbon Nanotube Transistors

Perello

ChuLim²,

Chae³

et al. 2010

ACS Nano

Self Cite

View full text Add to dashboard Cite

Devices incorporating nanoscale materials, particularly carbon nanotubes (CNTs), offer exceptional electrical performance. Absent, however, is an experimentally backed model explaining contact-metal work function, device layout, and environment effects. To fill the void, this report introduces a surface-inversion channel model based on low temperature and electrical measurements of a distinct single-walled semiconducting CNT contacted by Hf, Cr, Ti, and Pd electrodes. Anomalous barrier heights and metal-contact dependent band-to-band tunneling phenomena are utilized to show that, dependent upon contact work function and gate field, transport occurs either directly between the metal and CNT channel or indirectly via injection of carriers from the metal-covered CNT region to the CNT channel. The model is consistent with previously contradictory experimental results, and the methodology is simple enough to apply in other contact-dominant systems.

show abstract

Bias-induced doping engineering with ionic adsorbates on single-walled carbon nanotube thin film transistors

Cited by 4 publications

References 33 publications

p–n hetero-junction diode arrays of p-type single walled carbon nanotubes and aligned n-type SnO₂nanowires

p–n hetero-junction diode arrays of p-type single walled carbon nanotubes and aligned n-type SnO₂nanowires

Adaptive Logic Circuits with Doping-Free Ambipolar Carbon Nanotube Transistors

Anomalous Schottky Barriers and Contact Band-to-Band Tunneling in Carbon Nanotube Transistors

Contact Info

Product

Resources

About

Bias-induced doping engineering with ionic adsorbates on single-walled carbon nanotube thin film transistors

Cited by 4 publications

References 33 publications

p–n hetero-junction diode arrays of p-type single walled carbon nanotubes and aligned n-type SnO2nanowires

p–n hetero-junction diode arrays of p-type single walled carbon nanotubes and aligned n-type SnO2nanowires

Adaptive Logic Circuits with Doping-Free Ambipolar Carbon Nanotube Transistors

Anomalous Schottky Barriers and Contact Band-to-Band Tunneling in Carbon Nanotube Transistors

Contact Info

Product

Resources

About

p–n hetero-junction diode arrays of p-type single walled carbon nanotubes and aligned n-type SnO₂nanowires

p–n hetero-junction diode arrays of p-type single walled carbon nanotubes and aligned n-type SnO₂nanowires