Bias stability of solution-processed In₂O₃ thin film transistors

Abstract

We report the effect of bias stress on the drain current and threshold voltage of n-channel thin-film transistors based on solution processed In2O3 layers. Application of a positive gate bias for variable time-periods led to displacements of the transfer curves in the positive gate bias direction. On switching off the gate bias, the transfer curves returned close to their pre-stress state on a timescale similar to that when the gate bias was switched on. The time dependence of the threshold voltage shift is described well by a stretched-exponential model. The temporal behaviour of the threshold voltage shifts is consistent with charge trapping as the dominant effect, although some defect formation cannot be ruled out.

The influence of annealing atmosphere on sputtered indium oxide thin-film transistors

“…Previous studies on OS thin films and TFTs have demonstrated that that O III mainly originates from the oxygen in absorbed hydroxyl and carbonate species (O-H/C-O), which typically generate acceptor-like states near the CB edge and enhance electron trapping during PBS application because of their polar nature in OSs [29]. Therefore, the larger It is known that there are two factors that contribute to V TH instability: (1) defect creation in the channel and (2) charge trapping in the dielectric and/or at the channel/insulator interface [53]. Defect creation typically results in the persistent degradation of sub-threshold slope and device mobility, whereas charge trapping does not [54].…”

Transparent Electronics for Wearable Electronics Application

“…In 2 O 3 is another preferred N-type semiconductor for its wide band gap (3.6 eV) and optical transparency. , After the early study was conducted on the semiconducting properties of In 2 O 3 , the majority of research has focused on the doping process to fabricate ITO and its applications as a transparent conductor due to its superior optical and electrical properties. , Only within the last decades has the utility of In 2 O 3 and related metal oxides as wide-bandgap semiconductors been re-established, leading to a comprehensive investigation of their properties from a semiconductor physics perspective. Recent research has indicated that In 2 O 3 displays remarkable potential in multiple areas, including TFT, , optoelectronics, supercapacitors, field emissions, solar cells, and sensors . Several synthesis methods, including electrospinning, sputtering, , sol–gel, and thermal annealing, have been employed to fabricate In 2 O 3 with diverse morphologies, such as nanorods, nanowires, nanotubes, and thin film .…”

“… 355 , 356 Only within the last decades has the utility of In 2 O 3 and related metal oxides as wide-bandgap semiconductors been re-established, leading to a comprehensive investigation of their properties from a semiconductor physics perspective. Recent research has indicated that In 2 O 3 displays remarkable potential in multiple areas, including TFT, 357 , 358 optoelectronics, 358 supercapacitors, 359 field emissions, 360 solar cells, 361 and sensors. 362 Several synthesis methods, including electrospinning, 363 sputtering, 364 , 365 sol–gel, 366 and thermal annealing, 367 have been employed to fabricate In 2 O 3 with diverse morphologies, such as nanorods, 366 nanowires, 367 nanotubes, 368 and thin film.…”

Solution-processed bilayer InGaZnO/In2O3 thin film transistors at low temperature by lightwave annealing

“…However, the excessive carrier concentration in In 2 O 3 layer may lead to high off-current, which deteriorates the on/off current ratio of oxide TFTs [8]. Moreover, the instability of In 2 O 3 TFTs is an inevitable obstacle that limits their industrial applications [9,10].…”