Bias-Stress-Induced Instability of Polymer Thin-Film Transistor Based on Poly(3-Hexylthiophene)

Liu, Y. R.; Liao, Ruijuan; Lai, P.T.; Yao, Ruohe

doi:10.1109/tdmr.2011.2163408

Cited by 15 publications

(4 citation statements)

References 16 publications

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“…A PBS, on the other hand, tended to reset VT to its pristine value only for TFTs on Si. This is related to the movement of holes and, consequently, traps being filled or emptied at the semiconductor/dielectric interface under the presence of a constant gate voltage [25,45]. Liu et al showed that holes, which are induced in the channel during the prolonged application of a negative bias stress, are trapped in defect states located at the semiconductor interface with SiO2.…”

Section: B Current Versus Voltage Shifts Under Stressmentioning

confidence: 99%

Bias Stress in Organic Thin-Film Transistors Towards Low-Cost Flexible Gas Sensors

Izquierdo

Oliveira

Nogueira

et al. 2021

JICS

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This work is focused on the bias stress (BS) effects in Organic Thin-Film Transistors (OTFTs) from poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT-C14) on both highly-doped Si and glass substrates. While the former had a thermally-grown SiO2 dielectric, the latter demanded an alternative dielectric that should be capable to withstand bottom contact lithography, as well as semiconducting thin-film deposition. In addition, it should represent one more step towards flexible electronics. In order to do that, poly(4-vinylphenol) (PVP) was blended to poly(melamine-co-formaldehyde) methylated (PMF). OTFTs on glass with a cross-linked polymer dielectric had a charge carrier mobility (μ) of 4.0x10-4 cm2/Vs, threshold voltage (VT) of 18 V, current modulation (ION/OFF) higher than 1x102, and subthreshold slope (SS) of -7.7 V/dec. A negative BS shifted VT towards negative values and produced an increase in ION/OFF. A positive BS, on the other hand, produced the opposite effect only for OTFTs on Si. This is believed to be due to a higher trapping at the PVP:PMF interface with PBTTT-C14. Modeling the device current along time by a stretched exponential provided shorter time constants of ca. 105 s and higher exponents of 0.7–0.9 for devices on glass. Due to the presence of increased BS effects, the application of organic TFTs based on PVP:PMF as flexible sensors will require compensating circuits, lower voltages or less measurements in time. Alternatively, BS effects could be reduced by a dielectric surface treatment.

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Section: B Current Versus Voltage Shifts Under Stressmentioning

confidence: 99%

Bias Stress in Organic Thin-Film Transistors Towards Low-Cost Flexible Gas Sensors

Izquierdo

Oliveira

Nogueira

et al. 2021

JICS

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“…Quantitative analysis for the instability, however, has been rarely reported while there have been a lot of works for high mobility PTFTs. Although previous studies for bias stress instability analyzed the positive charge (hole) trapping into gate insulator or its interface as the main origin of stressinduced instability [4], [5], the quantitative investigation and analysis for its correlated factors is the urgent research that should be performed in advance since the physical origins of the bias stress-induced instability strongly interact in the actual polymer semiconductor devices.…”

Section: Introductionmentioning

confidence: 99%

Physical Origins and Analysis of Negative-Bias Stress Instability Mechanism in Polymer-Based Thin-Film Transistors

Lee

Jang

Kim

et al. 2014

IEEE Electron Device Lett.

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The physical origins of the negative-bias stress (NBS) instability in polymer-based thin-film transistors have been characterized. Through the quantitative analysis by TCAD simulation for the NBS time-dependent experimental results, the threshold voltage (V T )-shift by sub-bandgap density-of-states redistribution forms 70% and 78% for the measured total V T -shift while V T -shift by gate oxide charge trapping only takes 30% and 22% at NBS time of 3000 and 7000 s, respectively. In addition, the increase of source/drain Schottky contact resistance (R SD ) is the main reason for NBS-induced ON-current (I ON ) degradation.

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“…It is well known that P3HT based OTFTs show a decrease of current until a plateau is reached, 30 as determined by charge trapping inside deep energy states of P3HT. 31 We measured the drain current as a function of time, for a 10% blend of AuNP-BPT coated devices, by applying a constant bias-stress at the drain V d ¼ À5 V and a gate voltage V g calculated from the threshold voltage of the device extracted from the saturation regime with V g À V th ¼ À5 V for a time of 30 minutes. The drain current decreases in the rst few minutes and reaches a plateau at different times depending on the sample (see Fig.…”

mentioning

confidence: 99%

The role of size and coating in Au nanoparticles incorporated into bi-component polymeric thin-film transistors

et al. 2014

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We describe the effect of blending poly(3-hexylthiophene) (P3HT) with Au nanoparticles (AuNPs) on the performance of organic thin-film transistors. To this end we have used AuNPs of two different sizes coated with chemisorbed SAMs of oligophenyl-thiols possessing increasing lengths. The electrical characteristics of the hybrid materials revealed changes in the field-effect mobility depending primarily on the AuNP size, as a result of the variable energy level of the coated metallic nanocluster and by the degree of modification of the P3HT crystalline structure.

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Bias-Stress-Induced Instability of Polymer Thin-Film Transistor Based on Poly(3-Hexylthiophene)

Cited by 15 publications

References 16 publications

Bias Stress in Organic Thin-Film Transistors Towards Low-Cost Flexible Gas Sensors

Bias Stress in Organic Thin-Film Transistors Towards Low-Cost Flexible Gas Sensors

Physical Origins and Analysis of Negative-Bias Stress Instability Mechanism in Polymer-Based Thin-Film Transistors

The role of size and coating in Au nanoparticles incorporated into bi-component polymeric thin-film transistors

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