Bias Temperature Instability of a-IGZO TFTs Under Repeated Stress and Recovery

Kim, Hyun‐Jin; Oh, Jungyeop; Choi, Sung‐Yool; Park, Hamin

doi:10.1007/s11664-023-10386-x

J. Electron. Mater.

2023

DOI: 10.1007/s11664-023-10386-x

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Bias Temperature Instability of a-IGZO TFTs Under Repeated Stress and Recovery

Hyun‐Jin Kim

Jungyeop Oh

Sung‐Yool Choi

et al.

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Cited by 5 publications

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P‐12: Improve the Reliability of a‐IGZO TFT through Optimizing the Threshold Voltage and Channel Thickness in AMOLED Hybrid Backplane

Yu,

Shen,

Wan

et al. 2024

Symp Digest of Tech Papers

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In the fabrication of flexible a‐IGZO and LTPS thin film transistor (TFT) hybrid backplane, various threshold voltage (Vth) of the a‐IGZO TFT was achieved in this paper by regulating the O2/Ar ratio during the deposition of a‐IGZO film by sputtering. The results show that the Vth increases with the increase of the O2/Ar ratio, and the reliability tests indicate that in a certain range negative adjustment of Vth can significantly improve the positive bias temperature instability (PBTI) of IGZO TFT, and maintain good electrical uniformity. The increase of the O2/Ar ratio reduces the number of oxygen vacancy (Vo) in the a‐IGZO channel, and thereby Vth is positively shifted, which is confirmed by the TCAD simulation. The Vth value can indicate the Vo concentration in a‐IGZO TFT channel partly, and appropriately higher amount of Vo is beneficial to improve the PBTI, which is attributed to Fermi level (EF) shifting closer to conduction band. Raised EF means less unoccupied trap states, resulting in less carrier trapping under PBTI. Furthermore, the research also explores different a‐IGZO channel thicknesses and finds that when the Vth values are similar, thinner channel layers endow a‐IGZO TFT with improved PBTI. By optimizing the Vth and channel thickness, a‐IGZO TFTs with a channel thickness of 25nm and a Vth value of 0.2V have been prepared in a hybrid backplane. Under positive bias temperature stress for 5 hours, the Vth is positively shifted less than 0.5 V, which could lay the foundation for achieving high‐reliability flexible backplane for AMOLEDs.

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P‐12: Improve the Reliability of a‐IGZO TFT through Optimizing the Threshold Voltage and Channel Thickness in AMOLED Hybrid Backplane

Yu,

Shen,

Wan

et al. 2024

Symp Digest of Tech Papers

View full text Add to dashboard Cite

show abstract

Fabrication of an In-rich IGZO TFT by Co-sputtering of In2O3 and IGZO and Characterization of its Compensated Positive Bias Stress Properties

Lee,

Kim,

et al. 2024

Trans. Electr. Electron. Mater.

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Electrical instabilities of a-IGZO TFTs under different conditions of bias and illumination stress

Toledo

Luna

Hernandez-Cuevas

et al. 2023

Microelectronics Reliability

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Bias Temperature Instability of a-IGZO TFTs Under Repeated Stress and Recovery

Cited by 5 publications

References 40 publications

P‐12: Improve the Reliability of a‐IGZO TFT through Optimizing the Threshold Voltage and Channel Thickness in AMOLED Hybrid Backplane

P‐12: Improve the Reliability of a‐IGZO TFT through Optimizing the Threshold Voltage and Channel Thickness in AMOLED Hybrid Backplane

Fabrication of an In-rich IGZO TFT by Co-sputtering of In2O3 and IGZO and Characterization of its Compensated Positive Bias Stress Properties

Electrical instabilities of a-IGZO TFTs under different conditions of bias and illumination stress

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