Biaxial alignment of TiN films prepared by ion beam assisted deposition

Gerlach, Jürgen W.; Preckwinkel, U.; Wengenmair, H.; Kraus, T.; Rauschenbach, B.

doi:10.1063/1.115858

Cited by 26 publications

(5 citation statements)

References 1 publication

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“…The observations discussed in this subsection so far are only valid for normal incidence, thus orientation effects of the substrate normal and the ion beam incidence angle act in parallel. When changing the ion beam direction to selected crystallographic directions, the establishment of a biaxial alignment of the functional thin films is possible, as shown—again—for the system Ti-N with ion beam assisted deposition [ 103 ]. When comparing the texture evolution for off-normal ion bombardment for TiN, VN and CrN under identical conditions, additional influences of sputter yields and radiation damage on the orientation distribution are observed [ 104 ].…”

Section: Thin Film Propertiesmentioning

confidence: 99%

Thin Film Deposition Using Energetic Ions

2010

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One important recent trend in deposition technology is the continuous expansion of available processes towards higher ion assistance with the subsequent beneficial effects to film properties. Nowadays, a multitude of processes, including laser ablation and deposition, vacuum arc deposition, ion assisted deposition, high power impulse magnetron sputtering and plasma immersion ion implantation, are available. However, there are obstacles to overcome in all technologies, including line-of-sight processes, particle contaminations and low growth rates, which lead to ongoing process refinements and development of new methods. Concerning the deposited thin films, control of energetic ion bombardment leads to improved adhesion, reduced substrate temperatures, control of intrinsic stress within the films as well as adjustment of surface texture, phase formation and nanotopography. This review illustrates recent trends for both areas; plasma process and solid state surface processes.

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Section: Thin Film Propertiesmentioning

confidence: 99%

Thin Film Deposition Using Energetic Ions

2010

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“…Although microstructural changes of TiN, with a focus to control the surface kinetics, [9][10][11][12][13][14] have been widely investigated, there is no direct report on the impact to the film density. Argon and nitrogen gases are introduced and the flows are controlled independently by means of automated mass flow controllers.…”

Section: Introductionmentioning

confidence: 99%

Control of bombardment energy and energetic species toward a superdense titanium nitride film

Xie

Allen

Chang

et al. 2010

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Plasma induced microstructural, compositional, and resistivity changes in ultrathin chemical vapor deposited titanium nitride films TiN deposited by dc magnetron sputtering has been widely used as a hard mask material for dielectric patterning in multilevel Cu interconnects. Typically inside a "poison-mode" regime, the film density is 4.5-4.9 g / cm 3 . The microstructure, varying from columnar structure to nanocrystalline, is controlled by both thermodynamics and surface kinetics through ionization, substrate bias, target voltage, etc. A relatively low density film can be correlated with a porous columnar structure, low mechanical robustness, and weak resistance to plasma etching. However, with controlled growth, an applied substrate bias does not create resputtering and crystal defects. Instead, the authors create film with a maximum density of 5.3 g / cm 3 . In this high density film, carrier scatterings through grain boundary are greatly suppressed and the film resistivity is as low as 95 ⍀ cm, which brings additional benefits as a conductive capping layer. As it is deposited at room temperature, the process minimizes the thermal budget to the underlying low-k dielectric materials to be patterned.

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“…The ion beam assisted deposition (IBAD) technique has been used to develop biaxial texture in a number of metals, metal oxides and metal nitrides [1][2][3][4] . The process is an enabling method for the development of second generation high-temperature superconducting coated conductors 2 .…”

Section: Introductionmentioning

confidence: 99%

Investigation of Early Nucleation Events in Magnesium Oxide During Ion Beam Assisted Deposition

et al. 2008

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Ion beam assisted deposition (IBAD) is used to biaxially texture magnesium oxide (MgO), which is useful as a template for the heteroepitaxial growth of various thin film devices and most notably as a template layer for high temperature superconductors. Improvements in the quality of IBAD MgO films have been largely empirical and there is uncertainty as to the exact mechanism by which this biaxial texture is developed. Using a specially built quartz crystal microbalance (QCM) as both a substrate and monitor in conjunction with reflected high-energy electron diffraction (RHEED) acting on the same surface, we have probed the initial stages of IBAD MgO growth in-situ. We have correlated corresponding RHEED images with real-time mass accumulation QCM data during the film growth. During IBAD growth, the mass accumulation exhibits a sharp change in slope corresponding to a sudden decrease in growth rate. Corresponding RHEED images show an abrupt onset of crystallographic texture at this point. A simple model incorporating differential etch rates of the MgO film and silicon nitride substrate can be used to fit the data but is inconsistent with the behavior during ion etching with no growth. It is, therefore, postulated that a more complex mechanism is responsible for the observed behavior.

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Biaxial alignment of TiN films prepared by ion beam assisted deposition

Cited by 26 publications

References 1 publication

Thin Film Deposition Using Energetic Ions

Thin Film Deposition Using Energetic Ions

Control of bombardment energy and energetic species toward a superdense titanium nitride film

Investigation of Early Nucleation Events in Magnesium Oxide During Ion Beam Assisted Deposition

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