Biaxial Strain Effect on Wurtzite GaN/AlGaN Quantum Well Lasers

Suzuki, Motohiro; Uenoyama, Takeshi

doi:10.1143/jjap.35.1420

Cited by 86 publications

(38 citation statements)

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“…Especially, the realization of high optical gain in UV emission range of AlGaN alloy is most important for using it as active region of UV lasers. However, it is theoretically predicted that the reduction of the transparency carrier density is difficult in III-nitride material lasers because of a large effective mass [4] in comparison with GaAs or InP based materials.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Self-Assembling AlGaN Quantum Dot on AlGaN Surfaces Using Anti-Surfactant

Hasegawa

Aoyagi

Tanaka

1999

MRS Internet j. nitride semicond. res.

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We report on the first artificial fabrication of self-assembling AlGaN quantum dots (QDs) on AlGaN surfaces using metal organic chemical vapor deposition (MOCVD). The AlGaN QDs are fabricated using a growth mode change from 2-dimensional step-flow growth to 3-dimensional island formation by modifying the AlGaN surface energy with Si anti-surfactant. The average lateral size and the thickness of fabricated AlGaN QDs, as determined by AFM, are approximately 20 nm and 6nm, respectively. The dot density was found to be controlled from 5×10 10 cm -2 down to 2×10 9 cm -2 by increasing the dose of Si anti-surfactant. We obtained the photoluminescence (PL) from AlGaN QDs embedded with Al 0.38 Ga 0.62 N capping layers. The Al incorporation in AlGaN QDs was controllable within the range of 1-5 %.

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Section: Introductionmentioning

confidence: 99%

Fabrication of Self-Assembling AlGaN Quantum Dot on AlGaN Surfaces Using Anti-Surfactant

Hasegawa

Aoyagi

Tanaka

1999

MRS Internet j. nitride semicond. res.

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“…The situation, however, is not as simple for LDs, because the fluctuation should change the density of states (DOS) and subsequently change the gain characteristics. Thus far, the reported experimental value of the differential gain, 58 Â 10 --18 cm 2 , of InGaN-QW LD [7] is relatively small compared with the theoretical value, 300 Â 10 --18 cm 2 , for ideal band states without alloy fluctuation [8]. This large difference will clearly be shown in this paper to be caused by the fluctuation.…”

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confidence: 53%

A Band-Tail Model for InGaN Alloy System and Design for Quantum Well Laser Operation

Yamaguchi

Kuramoto

Nido

et al. 2001

phys. stat. sol. (a)

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We have constructed a new theoretical model of compositional fluctuation in InGaN quantum wells (QWs) to investigate the effects of the fluctuation on emission properties and laser performance. The temperature dependence of the photoluminescence decay time for InGaN-QW structures is fully analysed by the model in terms of a band-edge state modified by the compositional variation. This model is then used to predict performance for InGaN-QW lasers. We found that the differential gain and the critical carrier density of the inversion distribution are strongly correlated with the fluctuation but in opposite ways and that the utilisation of the fluctuation is beneficial for a specific laser operation condition. Furthermore, laser diodes with different degrees of fluctuation in the active layers have been fabricated and the predicted dependence of differential gain on the fluctuation has been verified experimentally.

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“…Since there are rather large discrepancies concerning experimental values in GaN [17] [18], we shall only use these results to make numerical estimates. Neglecting the crystal compressibility, i.e.…”

Section: Resultsmentioning

confidence: 99%

Time-resolved photoluminescence studies of InGaN/GaN multiple quantum wells

Allègre

Lefèbvre

Juillaguet

et al. 1997

MRS Internet j. nitride semicond. res.

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We report both cw and time resolved optical investigations performed on an InGaN/GaN multiple quantum well grown by MOVPE on <0001>-oriented sapphire substrate. At low temperature we find a strong "blue" luminescence band, of which energy position corresponds well with the wavelength of stimulated emission when excited with a nitrogen laser. We show that this PL band appears systematically red-shifted with respect to the QWs features, which supports a standard picture of fluctuations of the indium composition. Coming to the time-resolved data, we find at low temperature at least two "blue" band components which are both associated with long decay times (up to 4-5 ns at 8K). The decay time is temperature dependent and, when rising the temperature, the recombination rate increases. At room temperature, we reach typical values in the range ~100 to 500 ps.

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Biaxial Strain Effect on Wurtzite GaN/AlGaN Quantum Well Lasers

Cited by 86 publications

References 0 publications

Fabrication of Self-Assembling AlGaN Quantum Dot on AlGaN Surfaces Using Anti-Surfactant

Fabrication of Self-Assembling AlGaN Quantum Dot on AlGaN Surfaces Using Anti-Surfactant

A Band-Tail Model for InGaN Alloy System and Design for Quantum Well Laser Operation

Time-resolved photoluminescence studies of InGaN/GaN multiple quantum wells

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