BiCMOS: technology and circuit design

Zimmer, G.; Esser, W.; Fichtel, J.; Hosticka, B.J.; Rothermel, Albrecht; Schardein, W.

doi:10.1016/0026-2692(89)90123-7

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1991

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Cited by 12 publications

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“…The feasibility of liquid-nitrogen temperature BiCMOS operation is now being explored (Zimmer et al 1989, Gaensslen and Jaeger 1987. The key problem is the lack of silicon bipolar transistors with good electrical properties for low temperature operation (Woo et al 1987).…”

Section: Introductionmentioning

confidence: 99%

Low temperature model of current gain versus the doping concentration of the base in silicon bipolar transistors

Jiang

Tongli

1991

International Journal of Electronics

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An expression for the current gain H FE of a bipolar transistor versus the doping concentration N B in the base at low temperature is presented. It is concluded that current gain continues to decrease with increasing N B when N B > No at low temperature. This result is the opposite to that at room temperature. This will provide a good basis for the rational design of bipolar transistors for low temperature operation.

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Section: Introductionmentioning

confidence: 99%