Electro-optic modulators (EOMs) convert high-speed electronic signals into optical signals. Such devices are of paramount significance to practical applications in telecommunication networks, [1][2][3] microwave signal processing, [4,5] and emerging applications such as quantum information [6] and optical sensors, [7,8] etc. The migration of EOMs to integrated devices is motivated by the demand for better-performance modulators with large bandwidth, low drive voltage, high extinction ratio, compact footprint, and the compatibility with large-scale integration. These requirements have resulted in the rapid development of EOMs based on many photonic platforms, including silicon, [9] indium phosphide, [10] discrete lithium niobate (LN), [11,12] and plasmonics. [13] While the EOMs have been greatly improved in the above platforms, the realization of a modulator that concurrently satisfies all necessary performance features is still challenging due to the limited electro-optic performance of the platform materials. For example, silicon is known as a significant photonics platform due to its excellent scalability and mature CMOS fabrication infrastructure. However, the implementation of electro-optic effect in silicon heavily relies on the doped free carrier, and the lack of intrinsic electro-optic effect of silicon prevents its further applications for high-speed systems with required bandwidth and low-power consumption.Recently, the thin-film LN on the insulator platform has emerged as a practical solution for high-performance electrooptic photonic devices. [14][15][16][17][18][19][20][21] Importantly, the thin-film LN platform combines the excellent electro-optic properties of bulk LN with advantages of photonic films such as a high index contrast and tightly confined modes. [22][23][24][25][26][27][28][29][30][31][32][33][34][35] Although high-performance EOM systems with low drive voltage and ultrahigh bandwidth have been experimentally demonstrated using Mach-Zehnder interferometer (MZI) on thin-film LN, [27,30,36] the centimeter length of the MZI devices presents a big challenge for applications in large-scale integrated optical interconnection systems.To further reduce the footprint of a modulator, resonant ring modulators have been widely studied. Ring modulators are key components in short-range optical interconnects due to their low operating voltage, compact size, and compatibility with CMOS circuit drivers. Micrometer-sized EOMs based on microring