Graphene-based photodetectors, taking the advantages of high carrier mobility and broadband absorption in graphene, have recently experienced rapid development. However, their performance with respect to responsivity and bandwidth is still limited by weak light-graphene interaction and large resistance-capacitance product. Here, we demonstrate a waveguide coupled integrated graphene plasmonic photodetector on a silicon-on-insulator platform. Benefiting from plasmonic enhanced graphene-light interaction and subwavelength confinement of the optical energy, we achieve a small-footprint grapheneplasmonic photodetector working at the telecommunication window, with large bandwidth beyond 110 GHz and high intrinsic responsivity of 360 mA/W. Attributed to the unique electronic bandstructure of graphene and its ultra-broadband absorption, operational wavelength range extending beyond mid-infrared, and possibly further, can be anticipated. Our results show that the combination of graphene with plasmonic devices has great potential to realize ultra-compact and high-speed optoelectronic devices for graphene-based optical interconnects. arXiv:1808.04815v3 [physics.app-ph]

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Regardless of the amount of selenium used, the dihydride 1 (Ar=2,6‐iPr2C6H3) reacts to afford 2. In solution, intermolecular elimination of H2Se takes place with formation of 3, which displays a bridging Al‐Se‐Al moiety. Compounds 2 and 3 are the first structurally characterized organometallic compounds which contain metal–SeH units.

Graphene opens up for novel optoelectronic applications thanks to its high carrier mobility, ultralarge absorption bandwidth, and extremely fast material response. In particular, the opportunity to control optoelectronic properties through tuning of Fermi level enables electro-optical modulation, optical-optical switching, and other optoelectronics applications. However, achieving a high modulation depth remains a challenge because of the modest graphene-light interaction in the graphene-silicon devices, typically, utilizing only a monolayer or few layers of graphene. Here, we comprehensively study the interaction between graphene and a microring resonator, and its influence on the optical modulation depth. We demonstrate graphene-silicon microring devices showing a high modulation depth of 12.5 dB with a relatively low bias voltage of 8.8 V. On-off electro-optical switching with an extinction ratio of 3.8 dB is successfully demonstrated by applying a square-waveform with a 4 V peak-to-peak voltage.Key words: graphene photonics, silicon microring resonator, electro-optical modulation, high modulation depth In addition to holding novel electronic properties, graphene is now also emerging as a material of interest in the area of optoelectronics. Graphene has many unique properties, such as zero-band gap and tunable Fermi level [1, 2], ultra-broad absorption bandwidth [3,4], high carrier mobility around 200000 cm 2 V -1 s -1 at room temperature [5,6], and a super high Kerr coefficient for high nonlinearity applications [7,8]. Those interesting properties give rise to many potential applications [9,10], such as wafer-scale integrated circuits [11], solar cells [12,13], high-speed graphene-silicon electro-optical modulators [14][15][16], optical-optical switches [17,18], saturation absorbers [19][20][21], photodetectors [22][23][24], and nonlinear media for four-wave mixing (FWM) [25,26].The deployment of graphene on top of a silicon waveguide is an efficient mean to make graphene-silicon hybrid devices. In order to electrostatically tune the Fermi level of graphene, there is a need to sandwich a thin layer of material with a high dielectric constant (e.g. Al 2 O 3 [27,28] or Si 3 N 4 [29]) between the silicon layer and the added layer of graphene. When this graphene-silicon capacitor is biased, carriers can be either accumulated on the graphene sheet, or swept out from the graphene sheet, resulting in a convenient tuning of the Fermi level and, thus, optical absorption [14]. This technology has enabled highspeed electro-optical modulators [14][15][16]. However, the strong light confinement in the high-index silicon gives a modest optical field overlap with the graphene layer. Hence, the graphene-light interaction is consequently too low to obtain a significant modulation depth. In order to enhance the modulation depth,

Abstract:We propose hydrogenated amorphous silicon nanowires as a platform for nonlinear optics in the telecommunication wavelength range. Extraction of the nonlinear parameter of these photonic nanowires reveals a figure of merit larger than 2. It is observed that the nonlinear optical properties of these waveguides degrade with time, but that this degradation can be reversed by annealing the samples. A four wave mixing conversion efficiency of + 12 dB is demonstrated in a 320 Gbit/s serial optical waveform data sampling experiment in a 4 mm long photonic nanowire.