Nonlinear properties of and nonlinear processing in hydrogenated amorphous silicon waveguides

Kuyken, Bart; Ji, Hua; Clemmen, Stéphane; Selvaraja, Shankar Kumar; Hu, Hao; Pu, Minhao; Galili, Michael; Jeppesen, P.; Morthier, Geert; Massar, Serge; Oxenløwe, Leif Katsuo; Roelkens, Günther; Baets, Roel

doi:10.1364/oe.19.00b146

Cited by 106 publications

(97 citation statements)

References 22 publications

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“…Although initial measurements yielded a FOM no better than c-Si (~0.5) [120,121], more recent results have shown FOMs ranging from 1 [122] to as high as 2 [123,124], allowing very high parametric gain (+26dB) over the C-band [125]. While a key problem for this material has been a lack of stability [126], very recently a-Si nanowires were demonstrated [127] that displayed a combination of high FOM of 5, high n 2 (3-4 times that of crystalline silicon) and good material stability at telecom wavelengths. A key goal of all optical chips is to reduce both device footprint and operating power.…”

Section: Future Challenges Opportunitiesmentioning

confidence: 99%

New CMOS-compatible platforms based on silicon nitride and Hydex for nonlinear optics

et al. 2013

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Section: Future Challenges Opportunitiesmentioning

confidence: 99%

New CMOS-compatible platforms based on silicon nitride and Hydex for nonlinear optics

et al. 2013

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“…The amplifier consisted of a 500 nm wide air-clad waveguide fabricated in a 220 nm thick a-Si:H layer. The waveguide dispersion was measured to be anomalous (−2.6 ps 2 /m) at the pump wavelength of 1535 nm [33]. The amplifier was able to amplify and convert ps signals pulses in a wavelength band ranging from~1500 nm to~1590 nm.…”

Section: Hydrogenated Amorphous Siliconmentioning

confidence: 99%

“…This is a more than 100-fold improvement over the best results in crystalline silicon [39] at this wavelength. In another experiment, the waveguides were also used in an all-optical signal processing experiment [33]. In this experiment, a 320 Gbit/s signal was sampled with an efficiency over 100 times stronger than could be achieved in crystalline silicon [40].…”

Section: Hydrogenated Amorphous Siliconmentioning

confidence: 99%

“…In our group, we have observed that the a-Si:H layers are photo-sensitive when using telecom-band pump pulses. As a result, the nonlinear index reduces over time, while simultaneously increased linear losses are observed [33]. The material degradation of a-Si:H is a known phenomenon in the photovoltaic community and still not fully understood [41][42][43].…”

Section: Hydrogenated Amorphous Siliconmentioning

confidence: 99%

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Nonlinear optical interactions in silicon waveguides

et al. 2017

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Abstract:The strong nonlinear response of silicon photonic nanowire waveguides allows for the integration of nonlinear optical functions on a chip. However, the detrimental nonlinear optical absorption in silicon at telecom wavelengths limits the efficiency of many such experiments. In this review, several approaches are proposed and demonstrated to overcome this fundamental issue. By using the proposed methods, we demonstrate amongst others supercontinuum generation, frequency comb generation, a parametric optical amplifier, and a parametric optical oscillator.

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“…Therefore, only small values of net gain in Raman amplifiers has been observed [115]. Several researchers have totally moved to other nonlinear materials such as hydrogenated amorphous silicon (a-Si:H) [116][117][118], silicon nitride (SiN) [119][120][121], Hydex TM [122,123], chalcogenide glass [124][125][126], and tantalum [131,132]. Table 1 summarizes n 2 and β TPA in all the materials discussed in the previous paragraph in comparison to SiO 2 , as a benchmark.…”

Section: Third-order Nonlinear Photonics On Siliconmentioning

confidence: 99%

Emerging heterogeneous integrated photonic platforms on silicon

Fathpour

2015

Nanophotonics

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Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI) waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths) and feasibility of electrically-injected lasers (at least at room temperature). More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the freecarrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III-V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for different purposes with the common feature of integrating them on a single substrate, most notably silicon.

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Nonlinear properties of and nonlinear processing in hydrogenated amorphous silicon waveguides

Cited by 106 publications

References 22 publications

New CMOS-compatible platforms based on silicon nitride and Hydex for nonlinear optics

New CMOS-compatible platforms based on silicon nitride and Hydex for nonlinear optics

Nonlinear optical interactions in silicon waveguides

Emerging heterogeneous integrated photonic platforms on silicon

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