Bidirectional Two-Terminal Switching Device for Crossbar Array Architecture

Song, Yun Heub; Park, Seung Young; Lee, Jung Min; Yang, Haoran; Kil, Gyu Hyun

doi:10.1109/led.2011.2157452

Cited by 19 publications

(16 citation statements)

References 11 publications

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“…Tunnel barriers can be formed by high-k materials (HfO 2 , ZrO 2 , and TiO 2 ). [34,57] Luo et al [34] reported TaO x -based selector with trapezoidal band structure (Ru/TaO x /TaO y /W), as shown in Fig. 3(f).…”

Section: Nonlinear Selector Devicesmentioning

confidence: 99%

Resistive switching memory for high density storage and computing*

Luo

Gong

et al. 2021

Chinese Phys. B

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The resistive random access memory (RRAM) has stimulated a variety of promising applications including programmable analog circuit, massive data storage, neuromorphic computing, etc. These new emerging applications have huge demands on high integration density and low power consumption. The cross-point configuration or passive array, which offers the smallest footprint of cell size and feasible capability of multi-layer stacking, has received broad attention from the research community. In such array, correct operation of reading and writing on a cell relies on effective elimination of the sneaking current coming from the neighboring cells. This target requires nonlinear I–V characteristics of the memory cell, which can be realized by either adding separate selector or developing implicit build-in nonlinear cells. The performance of a passive array largely depends on the cell nonlinearity, reliability, on/off ratio, line resistance, thermal coupling, etc. This article provides a comprehensive review on the progress achieved concerning 3D RRAM integration. First, the authors start with a brief overview of the associative problems in passive array and the category of 3D architectures. Next, the state of the arts on the development of various selector devices and self-selective cells are presented. Key parameters that influence the device nonlinearity and current density are outlined according to the corresponding working principles. Then, the reliability issues in 3D array are summarized in terms of uniformity, endurance, retention, and disturbance. Subsequently, scaling issue and thermal crosstalk in 3D memory array are thoroughly discussed, and applications of 3D RRAM beyond storage, such as neuromorphic computing and CMOL circuit are discussed later. Summary and outlooks are given in the final.

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Section: Nonlinear Selector Devicesmentioning

confidence: 99%

Resistive switching memory for high density storage and computing*

Luo

Gong

et al. 2021

Chinese Phys. B

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“…Temperaturedependent transport characterization would help to identify the actual mechanisms. Another possible mechanism for symmetrical exponential I-V characteristics in a back to back diode structure is provided in a n + /p/n + poly-Si device model, where the middle p-layer is fully depleted and a drain induced barrier lowering (DIBL) effect causes exponential current increase with applied voltage [63].…”

Section: Nonlinear Memory Select Devicesmentioning

confidence: 99%

Memory Select Devices

Chen

2014

Emerging Nanoelectronic Devices

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“…In recent years, several device technologies, such as vertical channel transistors (VCTs) and two terminal selective devices, have been reported [1,2,3]. Essential characteristics of a selective device include simple structure and high performance.…”

Section: Introductionmentioning

confidence: 99%

“…1a shows the schematic of the energy band diagram of the proposed Si 0.8 Ge 0.2 / Si/Si 0.8 Ge 0.2 structure. It is expected that a strained Si 0.8 Ge 0.2 layer with low dislocation has higher mobility than Si, which provides better current drivability compared to a structure with N+ Si/P Si/N+ Si only [3,5]. In addition, we expect that the heterojunction structure of Si 0.8 Ge 0.2 /Si will provide a flatter N+ doping profile in the SiGe layer and a steeper junction profile at the interface of Si 0.8 Ge 0.2 / Si because it has a higher phosphorus incorporation rate than Si/Si only [6].…”

Section: Introductionmentioning

confidence: 99%

“…2 shows the simulation results for the I-V characteristics under the junction structures of N+ (Si 0.8 Ge 0.2 )/P (Si)/N+ (Si 0.8 Ge 0.2 ). In this simulation, the N type of 1 Â 10 20 , the P type of 3 Â 10 18 , and the N type of 1 Â 10 20 atoms/cm 3 are applied to the junction layers, which are based on our previous work on Si/Si/Si structure [3]. First, we confirmed the dependency of the I-V characteristics at different lengths (15, 18, and 20 nm) of the P type Si layer, which is located in the middle.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Investigation of in-situ doping profile for N+/P/N+ bidirectional switching device using Si1−xGex/Si/Si1−xGex structure

Roh

Song

2015

IEICE Electron. Express

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We present a novel junction device with bidirectional current flow for switching devices in a high density spin torque transfer magnetic random access memory (STT-MRAM). In this structure, an N+ type strained SiGe material is adopted as a conduction layer to generate higher electron mobility and a flatter doping profile. A SiGe/Si/SiGe heterojunction structure is also used to obtain a better I on /I off ratio due to a steeper junction profile. It is confirmed by 3D simulation that this structure provides higher current drivability and I on /I off ratio. After the simulation, a junction device with N+ Si 0.8 Ge 0.2 /P Si/N+ Si 0.8 Ge 0.2 and an area of 4 × 4 um 2 is fabricated and evaluated for bidirectional current flow. From the results obtained, we propose that this bidirectional switching device with a heterojunction structure is a promising candidate for a high density STT-MRAM.

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Bidirectional Two-Terminal Switching Device for Crossbar Array Architecture

Cited by 19 publications

References 11 publications

Resistive switching memory for high density storage and computing*

Resistive switching memory for high density storage and computing*

Memory Select Devices

Investigation of in-situ doping profile for N+/P/N+ bidirectional switching device using Si<sub>1−x</sub>Ge<sub>x</sub>/Si/Si<sub>1−x</sub>Ge<sub>x</sub> structure

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