1996
DOI: 10.1006/spmi.1996.0002
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Biexponential intersubband relaxation in n-modulation-doped quantum-well structures

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Cited by 20 publications
(14 citation statements)
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(19 reference statements)
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“…The observed long relaxation time is consistent to the previously reported slow relaxation of electrons excited into barrier layers in modulation doped QWs [8,9]. We do not see a recovery of the saturation in 1 ps time scale.…”
supporting
confidence: 92%
“…The observed long relaxation time is consistent to the previously reported slow relaxation of electrons excited into barrier layers in modulation doped QWs [8,9]. We do not see a recovery of the saturation in 1 ps time scale.…”
supporting
confidence: 92%
“…Intersubband transitions (ISBT's) occurring in low-dimensional semiconducting systems have a number of unique properties that make them very attractive for many device applications. The most appealing feature of intersubband transitions is their large associated oscillator strengths [1] as well as their corresponding very fast relaxation times [2]. For instance, the large oscillator strengths observed in semiconductor quantum wells (QW's) are responsible for the large detected optical transition dipole moments.…”
Section: Introductionmentioning
confidence: 99%
“…In particular the second-and third-order responses, in the form of the coefficients of nonlinear optical rectification (NOR) and of second and third harmonics generation (SHG and THG). This is mostly motivated by the appearance of relatively large values of the oscillator strength -with correspondingly high values for the related electric dipole moment off-diagonal matrix elements-, together with small relaxation times, associated with energy transitions between the confined states in those systems [14,15]. As a consequence, the nonlinear optical properties would manifest in a more significant way.…”
Section: Introductionmentioning
confidence: 97%