BiFeO&lt;SUB&gt;3&lt;/SUB&gt; Films Doped in the A or B Sites: Effects on the Structural and Morphological Properties

Scillato, D; Licciardello, Nadia; Mr, Catalano; Condorelli, Guglielmo G.; R, Lo Nigro; Malandrino, Graziella

doi:10.1166/jnn.2011.5048

Cited by 9 publications

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“…High quality films have been deposited by pulsed laser deposition (PLD), [24][25][26][27] but most of the time chemical solution deposition, 27,28 sputtering 29,30 and solgel processes 31,32 have been used. The metal-organic chemical vapor deposition (MOCVD) has been less investigated for the deposition of BFO films, [33][34][35][36] despite being very appealing in regard to homogeneous deposition on large substrates, easy up-scaling possibility, and a large choice of available substrates and precursors. This paper presents the doping at the A-site of BiFeO3 thin film with dysprosium and the optimization of the MOCVD process.…”

Section: Introductionmentioning

confidence: 99%

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Dy-Doped BiFeO₃ thin films: piezoelectric and bandgap tuning

et al. 2022

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Section: Introductionmentioning

confidence: 99%

“…Metal-organic chemical vapor deposition (MOCVD) has been less investigated for the deposition of BFO films, [33][34][35][36] despite being very appealing with regard to homogeneous deposition on large substrates, easy up-scaling possibility, and a large choice of available substrates and precursors.…”

Section: Introductionmentioning

confidence: 99%

Dy-Doped BiFeO₃ thin films: piezoelectric and bandgap tuning

et al. 2022

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“…Different deposition techniques have been used to obtain thin films of BiFeO 3 , and their derived systems [14][15][16]. Most of the synthetic routes continue to rely on expensive single crystal substrates, such as SrTiO 3 , SrTiO 3 :Nb, and LaAlO 3 [17,18], but recently flexible or even bendable substrates are investigated [19].…”

Section: Introductionmentioning

confidence: 99%

Piezoelectric BiFeO3 Thin Films: Optimization of MOCVD Process on Si

2020

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This paper presents a simple and optimized metal organic chemical vapor deposition (MOCVD) protocol for the deposition of perovskite BiFeO3 films on silicon-based substrates, in order to move toward the next generation of lead-free hybrid energy harvesters. A bi-metal mixture that is composed of Bi(phenyl)3, and Fe(tmhd)3 has been used as a precursor source. BiFeO3 films have been grown by MOCVD on IrO2/Si substrates, in which the conductive IrO2 functions as a bottom electrode and a buffer layer. BiFeO3 films have been analyzed by X-ray diffraction (XRD) for structural characterization and by field-emission scanning electron microscopy (FE-SEM) coupled with energy dispersive X-ray (EDX) analysis for the morphological and chemical characterizations, respectively. These studies have shown that the deposited films are polycrystalline, pure BiFeO3 phase highly homogenous in morphology and composition all over the entire substrate surface. Piezoelectric force microscopy (PFM) and Piezoelectric Force Spectroscopy (PFS) checked the piezoelectric and ferroelectric properties of the film.

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“…Metal‐Organic Chemical Vapor Deposition (MOCVD) has demonstrated potential advantages over alternative deposition methods, such as physical vapor deposition (PVD) techniques, due to its good conformity and easy control over materials composition. MOCVD has been already applied to the deposition of pure BiFeO 3 films but, to our knowledge, there are only two report on the MOCVD deposition of BiFeO 3 films doped with Ba or Ti …”

Section: Introductionmentioning

confidence: 99%

“…Single‐species doped films are deposited using a mixed tri‐metallic source mixture consisting, in addition to the Bi(phenyl) 3 and Fe(tmhd) 3 complexes, of the Dy(hfa) 3 diglyme, Ba(hfa) 2 tetraglyme or Ti(tmhd) 2 (O‐iPr) 2 (Hhfa = 1,1,1,5,5,5‐hexafluoro‐2,4‐pentanedione, diglyme = 1‐Methoxy‐2‐(2‐methoxyethoxy)ethane; tetraglyme = 2,5,8,11,14‐Pentaoxapentadecane, O‐iPr = iso‐propoxide) to yield the Bi (1–x) (Dy) x FeO 3 , Bi (1–x) (Ba) x FeO 3 or BiFe 1–y (Ti) y FeO 3 films, respectively . The applicability of the present approach has been tested for the synthesis of the double‐doped system Bi (1–x) Ba x Fe (1–y) Ti y O 3 using a tetra‐metallic source containing the four different precursors…”

Section: Introductionmentioning

confidence: 99%

MOCVD Growth of Perovskite Multiferroic BiFeO₃ Films: The Effect of Doping at the A and/or B Sites on the Structural, Morphological and Ferroelectric Properties

Catalano

Spedalotto

Condorelli

et al. 2017

Adv Materials Inter

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reflects the promising applications of magnetoelectrics including magnetic field sensors, transducers, microwave devices, oscillators, phase shifters, heterogeneous read/write devices, spintronic devices, and so on. [4][5][6] Among various multiferroics, BiFeO 3 has attracted great attention in the last two decades, being the unique materials to have ferroelectric and magnetic transition temperatures well above room temperature. [7,8] These properties make BiFeO 3 very appealing for the above mentioned applications. In addition, doping BiFeO 3 thin films with rare-earth [9][10][11] represents one of the possible ways to obtain magnetoelectric systems. Recently, an electrical control of magnetic order by manipulating chemical pressure within the material has been achieved by lanthanum substitution in the antiferromagnetic ferroelectric BiFeO 3 . [12] BiFeO 3 oxide system has a slightly distorted perovskite structure. Perovskite structures of general formula ABO 3 play an important role due to their appealing and variegate functional properties. [13] In fact, a wide variety of substitutions at both A and B sites is responsible for the great flexibility of the perovskite structure giving rise to a very large number of derivatives with subtle variations in structure.Great efforts have focused on optimizing undoped BiFeO 3 to enhance the room temperature ferromagnetism. Among the various methods, ion substitution is the most useful and widely applied method to improve the multiferroic properties of BiFeO 3.[14] In particular, a lot of attention has been dedicated on doping of various elements like rare-earth, alkaline-earth metals and transition metals at the A or B site of bismuth ferrite to improve its magnetoelectric properties. [15][16][17] Considerable efforts have been devoted to the synthesis of BiFeO 3 at the nanoscale level [18] and to the study of its ferroelectric properties, but for the above mentioned applications BiFeO 3 is required in thin film forms. Up to date, BiFeO 3 films have been deposited on various substrates using physical vapor deposition techniques such as pulsed laser deposition (PLD), [19][20][21][22] molecular beam epitaxy [23,24] and sputtering. [25][26][27] Atomic layer deposition has been recently applied to the deposition of thin or ultrathin films of BiFeO 3 using a laminar layer approach, alternating Bismuth ferrite (BiFeO 3 ) materials have been the subject of intense research activity in the last two decades. The great interest arises from the BiFeO 3 being one of the rare multiferroic compounds in which ferroelectricity and magnetism coexist at room temperature. To improve these properties several studies have been reported on the doping at the A and/or B sites of the BiFeO 3 perovskite structure. In this short review, the attention is focused to the synthesis of BiFeO 3 and BiFeO 3 doped with Ba or Dy at the A site and Ti at the B site through Metal Organic Chemical Vapor Deposition (MOCVD). The applied MOCVD process consists of an in situ one step approach using a multi-metal s...

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BiFeO<SUB>3</SUB> Films Doped in the A or B Sites: Effects on the Structural and Morphological Properties

Cited by 9 publications

References 0 publications

Dy-Doped BiFeO₃ thin films: piezoelectric and bandgap tuning

Dy-Doped BiFeO₃ thin films: piezoelectric and bandgap tuning

Piezoelectric BiFeO3 Thin Films: Optimization of MOCVD Process on Si

MOCVD Growth of Perovskite Multiferroic BiFeO₃ Films: The Effect of Doping at the A and/or B Sites on the Structural, Morphological and Ferroelectric Properties

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BiFeO<SUB>3</SUB> Films Doped in the A or B Sites: Effects on the Structural and Morphological Properties

Cited by 9 publications

References 0 publications

Dy-Doped BiFeO3 thin films: piezoelectric and bandgap tuning

Dy-Doped BiFeO3 thin films: piezoelectric and bandgap tuning

Piezoelectric BiFeO3 Thin Films: Optimization of MOCVD Process on Si

MOCVD Growth of Perovskite Multiferroic BiFeO3 Films: The Effect of Doping at the A and/or B Sites on the Structural, Morphological and Ferroelectric Properties

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Dy-Doped BiFeO₃ thin films: piezoelectric and bandgap tuning

Dy-Doped BiFeO₃ thin films: piezoelectric and bandgap tuning

MOCVD Growth of Perovskite Multiferroic BiFeO₃ Films: The Effect of Doping at the A and/or B Sites on the Structural, Morphological and Ferroelectric Properties