Bilayer resist process for exposure with low-voltage electrons (STM-lithography)

Leuschner, Rainer; Günther, E.; Falk, G.; Hammerschmidt, A.; Kragler, K.; Rangelow, I. W.; Zimmermann, J.

doi:10.1016/0167-9317(95)00284-7

Cited by 6 publications

(2 citation statements)

References 9 publications

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“…Regarding low-energy electron exposure for crosslinking of polymeric resists, Kragler reported that the surface degradation of the resist films was enhanced during days with increased relative ambient humidity [62,76]. Thus, all results point towards an amplification of the degradation with increasing OH-group content.…”

Section: Influence Of the Environmentmentioning

confidence: 99%

Scanning probe lithography on calixarene towards single-digit nanometer fabrication

Kaestner

Rangelow

2020

Int. J. Extrem. Manuf.

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Cost effective patterning based on scanning probe nanolithography (SPL) has the potential for electronic and optical nano-device manufacturing and other nanotechnological applications. One of the fundamental advantages of SPL is its capability for patterning and imaging employing the same probe. This is achieved with self-sensing and self-actuating cantilevers, also known as ‘active’ cantilevers. Here we used active cantilevers to demonstrate a novel path towards single digit nanoscale patterning by employing a low energy (<100 eV) electron exposure to thin films of molecular resist. By tuning the electron energies to the lithographically relevant chemical resist transformations, the interaction volumes can be highly localized. This method allows for greater control over spatially confined lithography and enhances sensitivity. We found that at low electron energies, the exposure in ambient conditions required approximately 10 electrons per single calixarene molecule to induce a crosslinking event. The sensitivity was 80-times greater than a classical electron beam exposure at 30 keV. By operating the electro-exposure process in ambient conditions a novel lithographic reaction scheme based on a direct ablation of resist material (positive tone) is presented.

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Section: Influence Of the Environmentmentioning

confidence: 99%

Scanning probe lithography on calixarene towards single-digit nanometer fabrication

Kaestner

Rangelow

2020

Int. J. Extrem. Manuf.

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“…Very soon after its invention the scanning tunneling microscope was used for lithography as well [ 119 – 120 ]. Here, the resist exposure occurs due to electrons tunneling between the tip and resist or substrate [ 121 – 123 ], which results in the disruption of chemical bonds, e.g., Si–H bonds for silicon surfaces. The method must be performed in vacuum but can in principle achieve atomic resolution [ 124 ].…”

Section: Reviewmentioning

confidence: 99%

Charged particle single nanometre manufacturing

Prewett¹,

Hagen²,

Lenk³

et al. 2018

Beilstein J. Nanotechnol.

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Following a brief historical summary of the way in which electron beam lithography developed out of the scanning electron microscope, three state-of-the-art charged-particle beam nanopatterning technologies are considered. All three have been the subject of a recently completed European Union Project entitled “Single Nanometre Manufacturing: Beyond CMOS”. Scanning helium ion beam lithography has the advantages of virtually zero proximity effect, nanoscale patterning capability and high sensitivity in combination with a novel fullerene resist based on the sub-nanometre C60 molecule. The shot noise-limited minimum linewidth achieved to date is 6 nm. The second technology, focused electron induced processing (FEBIP), uses a nozzle-dispensed precursor gas either to etch or to deposit patterns on the nanometre scale without the need for resist. The process has potential for high throughput enhancement using multiple electron beams and a system employing up to 196 beams is under development based on a commercial SEM platform. Among its potential applications is the manufacture of templates for nanoimprint lithography, NIL. This is also a target application for the third and final charged particle technology, viz. field emission electron scanning probe lithography, FE-eSPL. This has been developed out of scanning tunneling microscopy using lower-energy electrons (tens of electronvolts rather than the tens of kiloelectronvolts of the other techniques). It has the considerable advantage of being employed without the need for a vacuum system, in ambient air and is capable of sub-10 nm patterning using either developable resists or a self-developing mode applicable for many polymeric resists, which is preferred. Like FEBIP it is potentially capable of massive parallelization for applications requiring high throughput.

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Electrodes for nanodot-based gas sensors

Toohey

2005

Sensors and Actuators B: Chemical

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Bilayer resist process for exposure with low-voltage electrons (STM-lithography)

Cited by 6 publications

References 9 publications

Scanning probe lithography on calixarene towards single-digit nanometer fabrication

Scanning probe lithography on calixarene towards single-digit nanometer fabrication

Charged particle single nanometre manufacturing

Electrodes for nanodot-based gas sensors

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