planarity, better crystallinity, [14,15] and lower schottky barrier [16][17][18] and more compact contact with electrodes; [18][19][20] however, it remains difficult to achieve satisfactory performance solely from molecular formula innovation.Recently, solar cells, transistors, and diodes are significantly improved by introduction of donor-acceptor heterojunctions with suitable electronic properties. [12,[20][21][22][23][24][25] For example, the performance of solar cells and transistors was boosted by employing bulk heterojunction with interpenetrating networks of donor and acceptor materials that address the bottleneck in excitation diffusion, [12,26] trigger the quantum well effect, [27][28][29] and increase electron mobility. [29,30] Inspired by these effects, a bulk heterojunction structure is recommended as the active layer to enhance the conductivity and efficiency of generating charges from photons in nonvolatile memory device. [31][32][33][34] We utilized organic bulk heterojunction in RRAMs to implement ternary memory with improved stability and device yield. X55 [35] is a new hole-transport material for use in organic solar cells. It is has low cost, good film-forming ability, good adherence to various substrates, a deeper highest occupied molecular orbital (HOMO) level, and a higher hole mobility and conductivity. PCBM is widely used in solar cell to compose organic bulk heterojunction. [34] These two materials are mature and commercially available, avoiding complex synthesis in their production. We used X55 and PCBM to construct an organic heterojunction aiming to improve memory device yield. Ternary memory yield of device from the blend of X55 and PCBM with 1:1 molar ratio is 58%, higher than that of pure X55, PCBM, or layer-by-layer stacking thereof. [38] Furthermore, the mixture was made on a flexible substrate, and was able to sustain its memory performance after 5000 bending cycles at a bending angle of 62°. Our work stimulates the new concept of active material design in n-nary RRAM devices.There are three main steps in the fabrication of ternary RRAM devices with a sandwich-like structure of ITO glass /active layers (80-200 nm)/Al (top electrode 80 nm). ITO glasses were first sonicated in acetone, deionized water, and ethanol for 10 min. Then, active layer materials of X55, PCBM (Figure 1a) were drop-casted onto ITO glasses, followed by annealing at 60 °C in vacuum. An array of top electrodes was deposited on the films through thermal evaporation of Al, forming the structure revealed by scanning electron imaging of the cross-section of Organic ternary resistive memory suffers from low device yield and wide writing voltage distribution and improvement through laborious molecular formula innovation is limited. Here, organic bulk heterojunction is employed as the active material in resistive random-access memories (RRAMs). The ternary memory yield of the device reaches 58% when prepared by blending X55 (N2, 7-bis(4-methoxyphenyl)N2, N7-bis (2-spiro [fluorene-9,9′oxanthracene]-spiro[fluorene-9,9′-...