Binding Energies of Hydrogenic Impurities on-Center and Off-Center in Cylindrical Quantum Dots Under Electric and Magnetic Fields

Wang, Sheng; Wei, Guozhu; Yi, Guang-Yu

doi:10.1142/s0217979210055937

Cited by 9 publications

(4 citation statements)

References 25 publications

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“…gives the distance of the electron from the impurity with i x , i y and i z coordinates of the impurity in the quantum dot, 0 F > is the electric field, and ( , , ) c V x y z is the confining potential which takes the value zero in the interior of the quantum dot and it is infinity otherwise. Solving the following SchrÖdinger equations, by using the finite-difference method within the quasi-one-dimensional effective potential model [8][9] , (0) (0) (0) 0 ( , , ) ( , , ) and nmk E . The expression of the jth-state binding energy is given by [7][8][9] (0) bj nmk nmk…”

Section: Theory and Calculationmentioning

confidence: 99%

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Binding Energy of Donor Impurity in a Rectangular Semiconductor GaAs Quantum Dot with Electric Field

Kang

Wang

2014

AMM

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Within the quasi-one-dimensional effective potential model and effective mass approximation, we calculate the ground and the first few excited state binding energies of a donor impurity in a rectangular quantum dot (RQD) in the presence of electric field. We discuss detailedly dependence of the binding energies on the impurity positions. The results show that the binding energy is the largest when the impurity is located at the center of RQD with zero field and is lowest when the impurity is located at the corner of the RQD. The peak strengths and positions of the probability density in RQD appear to be the critical control on such impurity-induced dependence. We believe our results can provide an indication for design of some photoelectric devices constructed based on GaAs RQD structures.

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Section: Theory and Calculationmentioning

confidence: 99%

“…Solving the following SchrÖdinger equations, by using the finite-difference method within the quasi-one-dimensional effective potential model [8][9] , (0) (0) (0) 0 ( , , ) ( , , ) and nmk E . The expression of the jth-state binding energy is given by [7][8][9] (0) bj nmk nmk…”

Section: Theory and Calculationmentioning

confidence: 99%

Binding Energy of Donor Impurity in a Rectangular Semiconductor GaAs Quantum Dot with Electric Field

Kang

Wang

2014

AMM

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“…Soylu (Soylu, 2012) investigated the influence of the fields on various quantum states using a asymptotic iteration method. The ground state energies of hydrogenic impurities in cylindrical quantum dots were studies using finite difference method (Wang, Wei, & Yi, 2010), complex absorbing potential (CAP) (Sahoo, Lin, & Ho 2008), and the finite difference methods have been applied to quantum dot under the influence of electric and magnetic fields within the effective mass approximation (Hong, Li-Xue, Xue, Chun-Yuan, & Liun-Jun, 2011). …”

Section: Introductionmentioning

confidence: 99%

The Ground State Electronic Properties of Two Electron Quantum Dot in External Magnetic and Electric Fields

Al-Hayek¹

2016

APR

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The ground state energies of two interacting electrons in two dimensions are studied within the framework of shifted 1/N expansion. The effect of external uniform magnetic and electric have been studied. Energies of the relative part of the Hamiltonian of the system are calculated for both weak and strong field regimes. Our results show a very good agreement with those obtained by other computational methods like asymptotic integration (AIM) and exact diagonalizaion methods.

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“…Using the finite-difference method, the electric and magnetic field effects on the on-center and off-center impurity binding energy in CQD have been studied by Wang et al 48 . In that work, the electric (magnetic) field has been considered perpendicular (parallel) to the axial axis of the structure.…”

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confidence: 99%

Donor impurity related optical and electronic properties of cylindrical GaAs-AlxGa1−x As quantum dots under tilted electric and magnetic fields

Heyn

Duque

2020

Sci Rep

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this article makes a theoretical study of the optical and electronic properties in cylindrical GaAs-Al x Ga 1−x As quantum dots in the presence of an arbitrarily located donor impurity and considering the simultaneous effects of tilted electric and magnetic fields. The studies are developed in the effective mass and parabolic band approximations. the solution of the Schrödinger equation is done through the finite element method considering tetrahedral meshes that can be adapted to regions where there are abrupt variations of the materials that make up the structure. Among the many results, reported for the first time in this article, we can mention: (i) the electronic spectrum, without and with shallow donor impurity, considering separate and combined effects of tilted electric and magnetic fields, (ii) the ground state binding energy as a function of the external electric and magnetic fields, their orientations concerning the axial axis of the quantum dot, and the impurity position, (iii) the squared reduced dipole matrix elements for impurity related inter-level optical transitions as a function of the tilted electric and magnetic fields and impurity position, and (iv) the optical absorption coefficient between the ground state and at least the first fifteen lowest excited states under tilted electric and magnetic fields and considering several impurity positions. From this study it can be concluded that the presence of tilted electric and magnetic fields and on-center or off-center shallow donor impurities, ostensibly enrich the optical and electronic properties of the system. It is observed that due to the rupture of the azimuthal symmetry of the cylindrical quantum dot, important modifications of the selection rules for inter-level transitions between states appear.

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Binding Energies of Hydrogenic Impurities on-Center and Off-Center in Cylindrical Quantum Dots Under Electric and Magnetic Fields

Cited by 9 publications

References 25 publications

Binding Energy of Donor Impurity in a Rectangular Semiconductor GaAs Quantum Dot with Electric Field

Binding Energy of Donor Impurity in a Rectangular Semiconductor GaAs Quantum Dot with Electric Field

The Ground State Electronic Properties of Two Electron Quantum Dot in External Magnetic and Electric Fields

Donor impurity related optical and electronic properties of cylindrical GaAs-AlxGa1−x As quantum dots under tilted electric and magnetic fields

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