Binding energy of hydrogenic impurity states in an inverse parabolic quantum well under static external fields

Abstract

Abstract. In the present theoretical study, we investigate the influence of external fields (electric and/or magnetic) on the binding energy of hydrogenic impurities in a GaAs/Ga1−xAlxAs inverse parabolic quantum well, in which the parabolicity depends on the Al concentrations at the well center. Our calculations have been based on the potential morphing method in the effective mass approximation. The systematic theoretical investigation contains results with all possible combinations of the involved parameters, as quantum well width, Al concentrations at the well center, position of the impurity and magnitudes of the external fields. PACS

Electric field effect on lowest excited-state binding energy of hydrogenic impurity in (In,Ga)N parabolic wire

“…Within the effective-mass approximation and without impurity, the Hamiltonian of an electron under uniform electric field per- 1 The article is published in the original.…”

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Influence of Oscillatory Impurity Potential and Concurrent Gasping of Impurity Spread on Excitation Profile of Doped Quantum Dots

“…Out of various kinds of investigations on impurity doping, control of optoelectronic properties emerges as the central theme [3][4][5][6][7][8][9][10][11][12][13][14][15]. Naturally, we find a vast literature comprising of good theoretical studies on impurity states [16][17][18][19][20][21]. Added to this, there are also some excellent experimental works which include the mechanism and control of dopant incorporation [22,23].…”

Excitations in doped quantum dot induced by accelerating impurity center

“…[5][6][7][8][9][10] Baskoutas et al in their novel work investigated the binding energy of hydrogenic impurity states in an inverse parabolic quantum well under static external fields. 11 Investigations on impurity states have gained considerable impetus with the advent of sophisticated experimental techniques such as molecular beam epitaxy, liquid phase epitaxy, and chemical vapor deposition. A series of elegant experiments on impurity doped quantum dot systems led to some promising outcomes.…”