Binding of Shallow Donor Impurities in Quantum-Well Structures

Jarosik, N.; McCombe, B. D.; Shanabrook, B. V.; Comas, J.; Ralston, J.D.; Wicks, G.

doi:10.1103/physrevlett.54.1283

Cited by 235 publications

(56 citation statements)

References 10 publications

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“…The binding energies and FIR transition energies for donors at different positions in GaAs QWs in the presence of magnetic fields have been calculated in detail by Greene and Lane [18]. This theory has been extensively verified by experiments [15,21]. The calculated 1s !…”

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confidence: 94%

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Terahertz Dynamics of Excitons in GaAs/AlGaAs Quantum Wells

et al. 1996

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By monitoring changes in excitonic photoluminescence that are induced by far-infrared (FIR) radiation, we observed resonant FIR absorption by magnetoexcitons in GaAs͞AlGaAs quantum wells. The dominant resonance is assigned to the 1s ! 2p 1 transition of the heavy-hole exciton, and agrees well with theory. At low FIR and interband excitation intensities, the 1s ! 2p 1 absorption feature is very narrow and broadens as either of these intensities is increased. The 1s ! 2p 1 absorption feature persists even when the FIR electric field is comparable to the electric field which binds the exciton. [S0031-9007 (96) Correlated electron-hole pairs form excitons in semiconductor heterostructures. Excitons in GaAs are hydrogenlike systems with Bohr radii of order 100 Å, and binding energies of order 10 meV. The importance and much of the rich structure of excitons have been revealed by extensive studies using one-and two-photon interband spectroscopies (0.75-1.5 eV in GaAs) [1]. However, very limited research has succeeded in directly exploring the internal dynamics of excitons [2][3][4]. In such studies, near-infrared (NIR) photons create excitons, and then far-infrared (FIR) radiation (of order 10 meV, 2.4 THz) manipulates them. At low FIR intensities, one expects to observe directly transitions between even-and odd-parity states of the exciton, which are not observable with linear interband spectroscopy. Such transitions provide new, sensitive tests for the theory of excitons, which is fundamental in the physics of semiconductors. At higher FIR intensities, it is possible to reach a nonperturbative regime in which the energy associated with the FIR electric field coupling to the exciton is comparable to both the binding energy and the FIR photon energy.Undoped direct (type I) quantum wells (QWs) are especially interesting since they are so commonly used and provide a simple model system for theoretical analysis. However, the short lifetime of excitons in type I QWs makes it difficult to achieve the large population of cold excitons required for FIR absorption studies. Recent experimental progress has been made in QWs using photoinduced absorption in staggered (type II) QWs [3] and time-resolved terahertz spectroscopy in type I QWs [4].

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confidence: 94%

“…3 shows the magnetic field at which the 1s ! 2p 1 -like transition occurs in four QWs (70, 100, 140, and 150 Å) at two FIR frequencies (103 and 130 cm 21 ). The 1s !…”

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confidence: 99%

Terahertz Dynamics of Excitons in GaAs/AlGaAs Quantum Wells

et al. 1996

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“…[1][2][3][4][5] Confinement of such impurities in quasi-two-dimensional GaAs/Al x Ga 1Ϫx As quantum wells ͑QWs͒ allows the tuning of these levels in a controlled way. For device applications the greater range the binding energy of the impurity can be tuned over the better.…”

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confidence: 99%

Acceptor binding energy in δ-doped GaAs/AlAs multiple-quantum wells

Zheng

Halsall

Harmer

et al. 2002

Journal of Applied Physics

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ArticleA series of Be ␦-doped GaAs/AlAs multiple-quantum wells with the doping at the well center were grown by molecular beam epitaxy. The photoluminescence spectra were measured at 4, 20, 40, 80, 120, and 200 K, respectively. The two-hole transitions of the acceptor-bound exciton from the ground state, 1S 3/2 (⌫ 6 ), to the first-excited state, 2S 3/2 (⌫ 6 ), have been clearly observed and the acceptor binding energy measured. A variational calculation is presented to obtain the acceptor binding energy as a function of well width. It is found that the experimental results are in good agreement with the theory.

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“…1 Binding energies of a hydrogenic donor in different quantum wells with GaAs/Ga 1-x Al x As have been investigated experimentally and theoretically by many authors. [2][3][4][5][6][7] Several authors have reported the effect of perturbations on hydrogenic donor binding energy in different quantum wells. 8,9 Surface Quantum Well (SQW) composed of vacuum/GaAs/GaAlAs are of considerable interest due to: (1) the presence of localised states even above the single quantum barrier in the GaAlAs layer; 10 and (2) the image charges that arise from the large dielectric mismatch at the single vacuum/GaAs interface.…”

Section: Introductionmentioning

confidence: 99%