Bipolar integrated circuits in SiC for extreme environment operation

Zetterling, Carl-Mikael; Hallén, Anders; Hedayati, Raheleh; Kargarrazi, Saleh; Lanni, Luigia; Malm, B. Gunnar; Mardani, Shabnam; Norström, H; Rusu, Ana; Suvanam, Sethu Saveda; Östling, Mikael

doi:10.1088/1361-6641/aa59a7

Cited by 32 publications

(15 citation statements)

References 59 publications

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“…9. Power devices usually aim to operate within this range of temperature values [54]. We therefore conclude that, the overall behavior of the C-T model for both electrons and holes describes better the mobility dependence on temperature.…”

Section: Temperature Dependencementioning

confidence: 68%

Validated physical models and parameters of bulk 3C–SiC aiming for credible technology computer aided design (TCAD) simulation

Arvanitopoulos¹,

Lophitis²,

Gyftakis³

et al. 2017

Semicond. Sci. Technol.

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The cubic form of SiC (βor 3C-) compared to the hexagonal α-SiC polytypes, primarily 4H-and 6H-SiC, has lower growth cost and can be grown heteroepitaxially in large area Silicon (Si) wafers which makes it of special interest. This in conjunction with the recently reported growth of improved quality 3C-SiC, make the development of devices an imminent objective. However, the readiness of models that accurately predict the material characteristics, properties and performance is an imperative requirement for attaining the design and optimization of functional devices. The purpose of this study is to provide and validate a comprehensive set of models alongside with their parameters for bulk 3C-SiC. The validation process revealed that the proposed models are in a very good agreement to experimental data and confidence ranges were identified. This is the first piece of work achieving that for 3C-SiC. Considerably, it constitutes the necessary step for Finite Element Method (FEM) simulations and Technology Computer Aided Design (TCAD).

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Section: Temperature Dependencementioning

confidence: 68%

Validated physical models and parameters of bulk 3C–SiC aiming for credible technology computer aided design (TCAD) simulation

Arvanitopoulos¹,

Lophitis²,

Gyftakis³

et al. 2017

Semicond. Sci. Technol.

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“…Analog and mixed-signal ICs have been successfully designed using the PDK. Analog circuits made in the same bipolar process, but without the PDK, demonstrated up to 500 ○ C, were reported in [25]. A flash ADC has been implemented using the PDK for HT applications.…”

Section: Analog and Mixed Signal Circuitsmentioning

confidence: 99%

Towards Silicon Carbide VLSI Circuits for Extreme Environment Applications

et al. 2019

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A Process Design Kit (PDK) has been developed to realize complex integrated circuits in Silicon Carbide (SiC) bipolar low-power technology. The PDK development process included basic device modeling, and design of gate library and parameterized cells. A transistor–transistor logic (TTL)-based PDK gate library design will also be discussed with delay, power, noise margin, and fan-out as main design criterion to tolerate the threshold voltage shift, beta ( β ) and collector current ( I C ) variation of SiC devices as temperature increases. The PDK-based complex digital ICs design flow based on layout, physical verification, and in-house fabrication process will also be demonstrated. Both combinational and sequential circuits have been designed, such as a 720-device ALU and a 520-device 4 bit counter. All the integrated circuits and devices are fully characterized up to 500 °C. The inverter and a D-type flip-flop (DFF) are characterized as benchmark standard cells. The proposed work is a key step towards SiC-based very large-scale integrated (VLSI) circuits implementation for high-temperature applications.

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“…SiC circuit technology is suitable for extreme environments, such as high temperature [1] and high radiation [2]. The bipolar junction transistor (BJT) technology have been demonstrated for use in emitter-coupled logic (ECL) [3], [4] and transistor-transistor logic (TTL) [5], [6]. The fieldeffect transistors (FETs) include impressive results in the use of metal-semiconductor FETs (MESFETs) [7], [8], junction FETs (JFETs) [9]- [11] and metal oxide semiconductor FETs (MOSFETs) [12]- [15].…”

Section: Introductionmentioning

confidence: 99%

High-Temperature Recessed Channel SiC CMOS Inverters and Ring Oscillators

Ekström

Malm

Zetterling

2019

IEEE Electron Device Lett.

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Digital electronics in SiC find use in hightemperature applications. The objective of this study was to fabricate SiC CMOS without using ion implantation. In this letter, we present a recessed channel CMOS process. Selective doping is achieved by etching epitaxial layers into mesas. A deposited SiO 2 -film, post-annealed at low temperature and re-oxidized in pyrogenic steam, is used as the gate oxide to produce a conformal gate oxide over the non-planar topography. PMOS, NMOS, inverters, and ring oscillators are characterized at 200 • C. The PMOS requires reduced threshold voltage in order to enable longterm reliability. This result demonstrates that it is possible to fabricate SiC CMOS without ion implantation and by low-temperature processing.

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Bipolar integrated circuits in SiC for extreme environment operation

Cited by 32 publications

References 59 publications

Validated physical models and parameters of bulk 3C–SiC aiming for credible technology computer aided design (TCAD) simulation

Validated physical models and parameters of bulk 3C–SiC aiming for credible technology computer aided design (TCAD) simulation

Towards Silicon Carbide VLSI Circuits for Extreme Environment Applications

High-Temperature Recessed Channel SiC CMOS Inverters and Ring Oscillators

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