Bipolar resistance switching characteristics with opposite polarity of Au/SrTiO3/Ti memory cells

Abstract

Two types of bipolar resistance switching with eightwise and counter eightwise polarities are observed to coexist in Au/SrTiO3/Ti memory cells. These two types of switching can be induced by different defect distributions which are activated by controlling the electric process. The analyses of I-V and C-V data reveal that the resistance switching with eightwise polarity originates from the change of Schottky barrier at the Au/SrTiO3 interface caused by trapping/detrapping effects at interface defect states, while the switching with counter eightwise polarity is caused by oxygen-vacancy migration.

TaO x -based resistive switching memories: prospective and challenges

“…Few of them reported low-current operation <100 μA only, which is very challenging for real applications in future. Among other various metal oxides such as NiO x [74-76], TiO x [77-81], HfO x [29,38,82-86], Cu 2 O [87], SrTiO 3 [43,88], ZrO 2 [89-92], WO x [28,30,93], AlO x [94-97], ZnO x [39,98-101], SiO x [102,103], GdO x [104,105], Pr 0.7 Ca 0.3 MnO 3 [15,106], GeO x [107,108], and tantalum oxide (TaO x )-based devices [31,109-128] are becoming attractive owing to their ease of deposition using existing conventional systems, high thermal stability up to 1,000°C [115], chemical inertness, compatibility with CMOS processes, and high dielectric constant (ϵ = 25). Moreover, Ta-O system has only two stable phases of Ta 2 O 5 and TaO 2 with large solubility of O (71.43 to 66.67 at.%) above 1,000°C in its phase diagram [129].…”

Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots

“…Many oxide materials such as NiO x [1-4], HfO x [5,6], Cu 2 O [7], Gd 2 O 3 [8], TaO x [9,10], TiO 2 [11], ZrO 2 [12,13], AlO x [14-16], Na 0.5 Bi 0.5 TiO 3 [17], SrTiO 3 [18], and so on have been reported for nanoscale nonvolatile resistive switching random access memory (ReRAM) applications. Basically, a single layer of resistive switching material has been investigated by many groups.…”

Memristance and memcapacitance modeling of thin film devices showing memristive behavior

“…Through recent papers [7,9], we find some published measured results that show variable capacitance of memristor device without giving a clear explanation about the effects behind this characteristics. Therefore, we are going to put general model which can fit all measured results using some fitting parameters.…”

“…Fabrications devices entailed either bipolar or unipolar that have different sandwiched materials [11] using several kinds of metal electrodes [12]. To have a better understanding of the underlying principles of the switching mechanism, published experimental work provides some insight into the technology and the data about junction capacitance lead to the possibility of memcapacitors rather than memristors [7]. Therefore, uprising demand of understanding current memristor device characteristics has been clear within the last three years which can be observed within hundreds of papers published in very short time.…”

“…Memristive behavior can be seen within the perspective of atomic switches or metal/oxide/metal junctions which have been addressed during the last two decades [6][7][8][9][10]. Fabrications devices entailed either bipolar or unipolar that have different sandwiched materials [11] using several kinds of metal electrodes [12].…”