Bipolar resistive switching behavior in MoS2 nanosheets fabricated on ferromagnetic shape memory alloy

Kumar, Anuj; Pawar, Shuvam; Sharma, Shubham; Kaur, Davinder

doi:10.1063/1.5037139

Cited by 46 publications

(47 citation statements)

References 35 publications

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“…A new class of artificial neural network architecture made up of a parallel memristor (memory + resistor) crossbar array is proposed to realize neuromorphic applications . A resistive random‐access memory (reRAM)‐based memristor, consisting of a simple metal–insulator–metal configuration, is a two‐terminal passive circuit element in which the internal resistance of the insulator reversibly changes via the formation and rupture of a conductive filament (CF) dependent on the magnitude and polarity of the external electric field . Besides its nonvolatile property, it has received significant attention not only for memory and neuromorphic applications, but also as a post‐Si complementary metal‐oxide semiconductor (CMOS) owing to its multistate switching capability, fast switching speed, high switching endurance, and high packing density .…”

Section: Introductionmentioning

confidence: 99%

Programmable Multilevel Memtransistors Based on van der Waals Heterostructures

Park

Mastro

Tadjer

et al. 2019

Adv Elect Materials

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memristor, consisting of a simple metalinsulator-metal configuration, is a twoterminal passive circuit element in which the internal resistance of the insulator reversibly changes via the formation and rupture of a conductive filament (CF) dependent on the magnitude and polarity of the external electric field. [4][5][6][7][8][9] Besides its nonvolatile property, it has received significant attention not only for memory and neuromorphic applications, but also as a post-Si complementary metal-oxide semiconductor (CMOS) owing to its multistate switching capability, fast switching speed, high switching endurance, and high packing density. [10][11][12] Particularly, the simple structure of the memristor, enables it to be combined with other active circuit elements to provide additional functionality and achieve zero static power consumption, facilitating nonvolatile in-memory computing. [3,9,13] The hybrid logic circuits have been demonstrated by the integration of a CMOS platform with a memristor. [14] Heteroepitaxy has suffered from the dislocations originating from the lattice mismatch. These defects created many issues in device performance and reliability. 2D materials have received significant attention for both electronic and optoelectronic applications in the post-Si era owing to their rich electronic band structures. [15] The surface of single-crystalline 2D materials is naturally passivated without any dangling bonds, preventing the formation of Shockley-Tamm states and undesirable interstitial charges at the heterointerface. [16] Strain-free heterostructures constructed by vdW epitaxy can prevent a lattice mismatch, thereby allowing true band gap engineering. [17,18] Furthermore, the chemical and mechanical robustness, along with the weak van der Waals (vdW) interaction of 2D materials, can prevent interdiffusion and degradation of the heterostructures. [19,20] Thus, the integration of various 2D materials from versatile platforms such as semimetallic graphene, semiconducting transition metal dichalcogenide (TMD), or insulating hexagonal boron nitride (h-BN) into diverse structures and configurations can help realize previously existing devices or new design concepts while preserving the unique properties of each layer. Withers et al. reported on vdW heterostructured lightemitting diodes by introducing quantum well structures. [21] Lee et al. reported that a vertically stacked n-MoS 2 /p-WSe 2 /n-MoS 2 heterojunction bipolar transistor shows a high current gain comparable to that of the III-V thin-film semiconductor devices. [22] Neuromorphic computing that mimics the energy-efficient cortical neural network in the human brain is attractive because of its possibility to process complex and massive data sets and achieve fast computing capability. Herein, a heterosynaptic and programmable memtransistor architecture with high computing functionality is reported by monolithically integrating a hexagonal boron nitride (h-BN) memristor with a molybdenum disulfide (MoS 2 ) transistor. Memristors consisting of a ve...

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Section: Introductionmentioning

confidence: 99%

Programmable Multilevel Memtransistors Based on van der Waals Heterostructures

Park

Mastro

Tadjer

et al. 2019

Adv Elect Materials

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“…A variety of materials, including inorganic and organic materials, have been found to have resistive switching behavior. [11,12] In recent years, 2D materials have been extensively studied for highperformance nanoelectronics devices, due to their excellent properties, such as high mechanism flexibility, ultimately thin bodies. [13][14][15] With resistive switching behaviors in 2D materials constantly observed, 2D materials have opened a new avenue of pursuing novel materials with excellent switching properties and shown great potential for application in RRAM.…”

mentioning

confidence: 99%

2D Heterostructure of Bi₂O₂Se/Bi₂SeO_x Nanosheet for Resistive Random Access Memory

Xia

Wang

Chen

et al. 2022

Adv Elect Materials

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2D materials have shown great potential in the application of resistive random access memory (RRAM) for information storage. Much attention has been attracted from 2D semiconducting bismuth oxyselenide (Bi2O2Se) for excellent properties in multi‐performance nanoelectronics. By using a chemical vapor deposition (CVD) method, Bi2O2Se nanosheets with high quality are grown. Combining with the oxygen plasma method, 2D heterostructure of Bi2O2Se/Bi2SeOx nanosheet is realized; and the heterostructure exhibits obvious resistive switching behavior. The resistive switching mechanism is analyzed in detail, and the conductive mechanism of the fabricated device is also discussed. The resistive switching of Bi2O2Se nanosheets is endowed through the method of O2 plasma treatment, which makes it feasible for developing its application in the RRAM.

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“…Ni–Mn–In/PLZT multiferroic heterostructures were fabricated on p-type Si(100) substrates by DC/RF magnetron sputtering, using 4 N purity commercial Ni–Mn–In and PLZT targets of 50 mm × 3 mm (diameter × thickness) dimensions. Prior to deposition, silicon substrates were cleaned by standard RCA technique, removing the organic species, oxide layer, and ionic contaminants from the surface of the silicon. , The uniform deposition of Ni–Mn–In on these silicon substrates was carried out for 10 min at 100 W DC power in the presence of pure argon onto the virgin Si surface. PLZT was subsequently sputtered at 120 W RF power for 1 h in an Ar + O 2 (1:1) atmosphere onto the Ni–Mn–In films.…”

Section: Methodsmentioning

confidence: 99%

Magnetoelectric Coupling in Ni–Mn–In/PLZT Artificial Multiferroic Heterostructure and Its Application in Mid-IR Photothermal Modulation by External Magnetic Field

Kumar

Goswami

Singh

et al. 2019

ACS Appl. Electron. Mater.

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Here we show fabrication of an artificial multiferroic heterostructure by a sputter deposited ferromagnetic Ni0.5Mn0.35In0.15 (Ni–Mn–In) layer followed by a ferroelectric Pb0.96La0.04(Zr0.52Ti0.48) O3 (PLZT) layer on silicon substrate. Room temperature X-ray diffraction of the heterostructures revealed a polycrystalline austenitic L21 phase formed at the bottom Ni–Mn–In layer and tetragonal phase formed on the top PLZT film. The Raman spectra of the sample exhibits the presence of Raman active modes at ∼322 and ∼622 cm–1, which emerge from the top PLZT layer, and with an additional hump in the range from ∼1227 to 1314 cm–1 due to either La vacancies in PLZT or formation of bonds at NiMnIn and PLZT interface. The ferroelectric behavior of the fabricated heterostructure is demonstrated using piezoresponse force microscopy (PFM) analysis and conventional P–E loop measurement. Room temperature magnetic force microscopy (MFM) and magnetic hysteresis measurements confirm the existence of ferromagnetism in the bilayer with a coercive magnetic field of 2E C 12–240.2 Oe and saturated magnetization of ∼121.55 emu/cc. Additionally this film also shows strong magnetoelectric coupling and exhibits an appreciable coupling coefficient (α) of 1.36 V/(cm Oe) measured by dynamic magnetic measurement. Further, the Ni–Mn–In/PLZT heterostructure exhibits excellent mid-infrared (1200–1400 cm–1, ∼7.1–8.3 μm) response with a maximum sensitivity of 1.65% at 1300 cm–1. The mid-infrared response is fastest for 1300 cm–1 infrared pulses with average response times of 3.4 s (rise) and 2.1 s (fall). Furthermore, it is also observed that the response time can be reduced by more than one and a half times (rise time, 1.5 s; fall time, 1.2 s) under the presence of 100 mT static magnetic field. Hence this phenomenon offers extra degrees of freedom to control the detection speed of a detector. We hypothesize this occurs in this case due to the rapid migration of charge carriers with minimal chance of recombination or loss due to spin polarization of charge carriers and increase in internal electric field of the ferroelectric layer under magnetic field due to strong magnetoelectric coupling in the Ni–Mn–In/PLZT multiferroic heterostructure. These results demonstrate that the Ni–Mn–In/PLZT multiferroic heterostructures have great potential to be used as mid-infrared detectors whose detection speed can be altered by magnetic field.

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Bipolar resistive switching behavior in MoS2 nanosheets fabricated on ferromagnetic shape memory alloy

Cited by 46 publications

References 35 publications

Programmable Multilevel Memtransistors Based on van der Waals Heterostructures

Programmable Multilevel Memtransistors Based on van der Waals Heterostructures

2D Heterostructure of Bi₂O₂Se/Bi₂SeO_x Nanosheet for Resistive Random Access Memory

Magnetoelectric Coupling in Ni–Mn–In/PLZT Artificial Multiferroic Heterostructure and Its Application in Mid-IR Photothermal Modulation by External Magnetic Field

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Bipolar resistive switching behavior in MoS2 nanosheets fabricated on ferromagnetic shape memory alloy

Cited by 46 publications

References 35 publications

Programmable Multilevel Memtransistors Based on van der Waals Heterostructures

Programmable Multilevel Memtransistors Based on van der Waals Heterostructures

2D Heterostructure of Bi2O2Se/Bi2SeOx Nanosheet for Resistive Random Access Memory

Magnetoelectric Coupling in Ni–Mn–In/PLZT Artificial Multiferroic Heterostructure and Its Application in Mid-IR Photothermal Modulation by External Magnetic Field

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2D Heterostructure of Bi₂O₂Se/Bi₂SeO_x Nanosheet for Resistive Random Access Memory