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The present study explores the systematic investigation of resistive switching response of magnetron sputtered MoS2 thin films sandwiched between a Ni-Mn-In ferromagnetic shape memory alloy (bottom) and copper (top) electrodes. The Cu/MoS2/Ni-Mn-In device exhibits stable and reproducible bipolar resistive switching behavior. The current-voltage (I-V) analysis suggests that the device shows ohmic conduction behavior in the low resistance state (LRS) while space charge limited conduction is the dominating conduction mechanism in the high resistance state (HRS). The compliance current vs reset current measurements were also performed which reveals that the power consumption of the device can be suppressed by decreasing the compliance current. To explain the resistive switching behavior in the Cu/MoS2/Ni-Mn-In device, a conceptual model based on copper ion migration, is proposed and well explained. The resistive switching parameters such as the set voltage, LRS and HRS resistances, are also investigated in a temperature range overlapping with the martensite phase transformation temperatures of the bottom ferromagnetic shape memory alloy (Ni-Mn-In) electrode. It provides temperature as an extra degree of freedom to modulate the resistive switching characteristics of the fabricated device. The Cu/MoS2/Ni-Mn-In device shows a decent endurance of 500 and a long retention of 103. These results demonstrate the feasibility of the MoS2 based devices for futuristic tunable nonvolatile resistive random access memory applications.

The present work explores the white light controlled resistive switching functionality of MoS2 nanorods (NRs) by fabricating a metal-insulator-metal stack configuration. The Cu/MoS2 NRs/Pt/Si device demonstrates the reproducible two-state bipolar resistive switching characteristics under both dark and light environments. In the dark condition, the resistive switching behavior of the NR device could be attributed to the metallic path formation/rupture between top and bottom electrodes. Whereas the applied white light causes the lowering of SET and RESET voltages by inducing conducting path formation/rupture via electron trapping/detrapping in sulfur vacancies across the MoS2 NRs. The formation of a conducting path under dark and light illumination conditions is well explained by proposing a conceptual model and analyzing the resistance vs temperature measurements. It is observed that the white light acts as an external tool to modulate the resistive switching behavior of the fabricated NR device. The correlation between the applied light intensity and the SET voltage is also demonstrated. The NR structure of the MoS2 device provides good endurance of 1500 cycles and a long retention time of 103 s at room temperature under light illumination because of straight conducting path formation through NRs. These results demonstrate that the optically active MoS2 NR based devices have potential for next generation tunable nonvolatile resistive random access memory applications with additional functionality such as photosensors and optoelectronic switches.

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