Growth assessment and scrutinize dielectric reliability of c-axis oriented insulating AlN thin films in MIM structures for microelectronics applications

Pawar, Shuvam; Singh, Kirandeep; Sharma, Shubham; Pandey, Akhilesh; Dutta, Shankar; Kaur, Davinder

doi:10.1016/j.matchemphys.2018.08.013

Cited by 30 publications

(21 citation statements)

References 37 publications

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“…Concerning the stoichiometry of the SMA film, smaller variations in the Z-contrast images are observed, and an average composition of ;Ti 50 Ni 33 Cu 17 was measured by EDS. However, close to the diffusion region, the EDS profiles indicate larger stoichiometric deviance of the TiNiCu Furthermore, the expected linear polarization [33] of AlN is obtained for this sample; therefore, this method is found to be the most promising fabrication route for tunable ME composite applications.…”

Section: Microstructural Characterization Of Aln On Crystallized and mentioning

confidence: 71%

“…Piezoelectric characterization of (002) AlN c-axis (002) AlN polycrystalline thin-film growth is known to be highly dependent on the underlying substrate surface roughness [28,33]. Variations in the structural and piezoelectric properties are evaluated for sputtered polycrystalline AlN onto (111) Pt seed layers on three substrates: Si (Sample 1), already crystalline TiNiCu on Si (Sample 2), and amorphous TiNiCu on Si (Sample 3).…”

Section: Methodsmentioning

confidence: 99%

“…Polycrystalline sputtered AlN will display its best mechanical and electrical performance when deposited onto a substrate with low surface roughness [28,33]. Because the structural quality of TiNiCu is dependent on the annealing conditions of the composite, future studies should consider significantly lower annealing temperatures (;500°C) because it was reported to reduce the small grain size and surface roughness for TiNiCu [22].…”

Section: Microstructural Characterization Of Aln On Crystallized and mentioning

confidence: 99%

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Integration of AlN piezoelectric thin films on ultralow fatigue TiNiCu shape memory alloys

et al. 2020

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Section: Microstructural Characterization Of Aln On Crystallized and mentioning

confidence: 71%

Section: Methodsmentioning

confidence: 99%

Section: Microstructural Characterization Of Aln On Crystallized and mentioning

confidence: 99%

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Integration of AlN piezoelectric thin films on ultralow fatigue TiNiCu shape memory alloys

et al. 2020

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“…The highly c-axis-oriented growth of AlN thin films is known to be essential for obtaining high piezoelectric coefficients [12]. Therefore, many researchers have devoted considerable effort to developing highly c-axis-oriented AlN thin films with high crystalline quality [13][14][15][16][17][18][19][20]. Epitaxial growth is an attractive method to realize this, and c-plane sapphire is one of the most practical and widely used substrates due to a reasonable lattice mismatch (around 13%) and cost [21,22].…”

Section: Introductionmentioning

confidence: 99%

Low-Temperature Epitaxial Growth of AlN Thin Films on a Mo Electrode/Sapphire Substrate Using Reactive Sputtering

Kim

2021

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High-crystalline aluminum nitride (AlN) thin films are essential for device applications, and epitaxial growth is a promising approach to improve their crystalline quality. However, a high substrate temperature is usually required for the epitaxial growth, which is not compatible with the complementary metal-oxide-semiconductor (CMOS) process. Furthermore, it is very difficult to obtain epitaxial AlN thin films on the deposited metal layers that are sometimes necessary for the bottom electrodes. In this work, epitaxial AlN thin films were successfully prepared on a molybdenum (Mo) electrode/sapphire substrate using reactive sputtering at a low substrate temperature. The structural properties, including the out-of-plane and in-plane relationships between the AlN thin film and the substrate, were investigated using X-ray diffraction (XRD) 2θ-ω, rocking curve, and pole figure scans. Additional analyses using scanning electron microscopy (SEM), atomic force microscopy (AFM), and transmission electron microscopy (TEM) were also carried out. It was shown that highly c-axis-oriented AlN thin films were grown epitaxially on the Mo/sapphire substrate with an in-plane relationship of AlN [112¯0]//sapphire [101¯0]. This epitaxial growth was attributed to the highly ordered and oriented Mo electrode layer grown on the sapphire substrate. In contrast, the AlN deposition on the Mo/SiO2/Si substrate under the same conditions caused poorly oriented films with a polycrystalline structure. There coexisted two different low-crystalline phases of Mo (110) and Mo (211) in the Mo layer on the SiO2/Si substrate, which led to the high mosaicity and polycrystalline structure of the AlN thin films.

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“…Though PZT is one of the most widely studied piezoelectric MEMS material [6,7,[30][31][32], AlN based MEMS resonators on piezoelectric operating principle are found interests among the research community in recent time (5, 22-24, 28, 29], Despite having lower piezoelectric coefficient than PZT, the choice of the AlN is driven by three major factors: (i) excellent thermal and chemical stability [33,34]; (ii) excellent CMOS process compatibility [26]; and (iii) environment-friendly nature [35,36]. Among different MEMS materials, silicon is widely used in MEMS technology because of its excellent mechanical properties, ease of micromachining, relatively low-cost [11,14,15,35,37,38].…”

Section: Introductionmentioning

confidence: 99%

Evaluation of Residual Stress of C Oriented AlN/Si (111) and Its Impact on Mushroom Shaped Piezoelectric Resonator 

Pandey

Dutta

Gupta

et al. 2021

Preprint

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Aluminum nitride-based MEMS resonators are one of the interesting recent research topics for its tremendous potential in a wide variety of applications. This paper focuses on the detrimental effect of residual stress on the AlN based MEMS resonator design for acoustic applications. The residual stress in the sputtered c axis (<001>) preferred oriented AlN layers on Si (111) substrates are studied as a function of layer thickness. The films exhibited compressive residual stresses at different thickness values: -1050 MPa (700 nm), -500 MPa (900 nm), and -230 MPa (1200 nm). A mushroom-shaped AlN based piezoelectric MEMS resonator structure has been designed for the different AlN layer thicknesses. The effect of the residual stresses on the mode shapes, resonant frequencies, and quality factor (Q) of the resonator structures are studied. The resonant frequency of the structures are altered from 235 kHz, 280 kHz, and 344 kHz to 65 kHz, 75 kHz and 371 kHz due to the residual stress of -1050 MPa (thickness: 700 nm), -500 MPa (thickness: 900 nm) and -230 MPa (thickness: 1200 nm) respectively. At no residual stress, the quality factors of the resonator structures are 248, 227, 241 corresponding to the 700 nm, 900 nm, and 1200 nm thick AlN layers respectively. The presence of the residual stress reduced the Q values from 248 (thickness: 700 nm), 227 (thickness: 900 nm), 241 (thickness: 1200 nm) to 28, 53, and 261 respectively.

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Growth assessment and scrutinize dielectric reliability of c-axis oriented insulating AlN thin films in MIM structures for microelectronics applications

Cited by 30 publications

References 37 publications

Integration of AlN piezoelectric thin films on ultralow fatigue TiNiCu shape memory alloys

Integration of AlN piezoelectric thin films on ultralow fatigue TiNiCu shape memory alloys

Low-Temperature Epitaxial Growth of AlN Thin Films on a Mo Electrode/Sapphire Substrate Using Reactive Sputtering

Evaluation of Residual Stress of C Oriented AlN/Si (111) and Its Impact on Mushroom Shaped Piezoelectric Resonator

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Growth assessment and scrutinize dielectric reliability of c-axis oriented insulating AlN thin films in MIM structures for microelectronics applications

Cited by 30 publications

References 37 publications

Integration of AlN piezoelectric thin films on ultralow fatigue TiNiCu shape memory alloys

Integration of AlN piezoelectric thin films on ultralow fatigue TiNiCu shape memory alloys

Low-Temperature Epitaxial Growth of AlN Thin Films on a Mo Electrode/Sapphire Substrate Using Reactive Sputtering

Evaluation of Residual Stress of C Oriented AlN/Si&nbsp;(111) and Its Impact on Mushroom Shaped Piezoelectric Resonator&nbsp;

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Evaluation of Residual Stress of C Oriented AlN/Si (111) and Its Impact on Mushroom Shaped Piezoelectric Resonator