Bipolar resistive switching behaviour of WS2 thin films grown by chemical vapour deposition

Das, Ujjal; Mahato, Barnali; Sarkar, Pranab Kumar; Roy, Asim

doi:10.1063/1.5113113

Cited by 4 publications

(3 citation statements)

References 10 publications

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“…Hence, discussion on the RS layer deposition techniques cannot be ignored [144]. Inorganic binary oxide storage materials are usually fabricated using various deposition techniques such radio frequency (RF) magnetron sputtering [193], thermal oxidation [194], pulsed laser deposition [195], plasma oxidation [196], electron beam evaporation [176], sol-gel method [192], chemical vapour deposition (CVD) [197] and atomic layer deposition (ALD) [198].…”

Section: Inorganic Dielectric Materials For Rrammentioning

confidence: 99%

“…Transition-metal dichalcogenides (TMDs) are other members of the 2D material family that have shown great promising characteristics for use in RRAM devices [251]. 2D materials like MoTe 2 , MoS 2 , MoSe 2 , WSe 2 , WS 2 have been used as the dielectric layer (active layer) of the RRAM devices sandwiched between the TE and BE to form memories on rigid and flexible substrate [197,231,254,255,[273][274][275][276][277][278][279][280]. The memory effect of MoS 2 was first appeared in the literature in 2012, and it was demonstrated that the bipolar RS of this developed device was due to charge carriers trapping and detrapping characteristics.…”

Section: -Dimensional Dielectric Materials For Rrammentioning

confidence: 99%

“…Summary of the switching performance of 2D-Based RRAM devices[197,231, V SET : SET voltage, V RESET : RESET voltage, B: bipolar, NA: data not available and NS: not specified…”

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confidence: 99%

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Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing

et al. 2023

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The modern-day computing technologies are continuously undergoing a rapid changing landscape; thus, the demands of new memory types are growing that will be fast, energy efficient and durable. The limited scaling capabilities of the conventional memory technologies are pushing the limits of data-intense applications beyond the scope of silicon-based complementary metal oxide semiconductors (CMOS). Resistive random access memory (RRAM) is one of the most suitable emerging memory technologies candidates that have demonstrated potential to replace state-of-the-art integrated electronic devices for advanced computing and digital and analog circuit applications including neuromorphic networks. RRAM has grown in prominence in the recent years due to its simple structure, long retention, high operating speed, ultra-low-power operation capabilities, ability to scale to lower dimensions without affecting the device performance and the possibility of three-dimensional integration for high-density applications. Over the past few years, research has shown RRAM as one of the most suitable candidates for designing efficient, intelligent and secure computing system in the post-CMOS era. In this manuscript, the journey and the device engineering of RRAM with a special focus on the resistive switching mechanism are detailed. This review also focuses on the RRAM based on two-dimensional (2D) materials, as 2D materials offer unique electrical, chemical, mechanical and physical properties owing to their ultrathin, flexible and multilayer structure. Finally, the applications of RRAM in the field of neuromorphic computing are presented.

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Section: Inorganic Dielectric Materials For Rrammentioning

confidence: 99%

Section: -Dimensional Dielectric Materials For Rrammentioning

confidence: 99%

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Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing

et al. 2023

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Emerging MXenes for Functional Memories

et al. 2021

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MXenes are a rapidly growing family of 2D materials. The composition, morphology, structure, surface chemistry, and structural configuration of MXenes directly affect their electrochemical performance. For example, when used as the source and drain electrodes in a transistor, MXenes provide increased chemically active interfaces, reduced ion diffusion length, and improved inplane carrier/charge transport kinetics, thus improving the storage performance of the transistor significantly. The work function and bandgap of MXenes can be controlled by tailoring their structure and surface functional groups. This makes MXenes as the first choice for several storage applications. Herein, the latest progress in the synthesis and properties of MXenes is summarized, and it is aimed to boost the motivation of researchers for developing novel MXenes and improving their applications. It emphasizes on the importance of MXenes in high‐density data storage applications, such as flash memories and memristors. The applications of MXenes in artificial synapses, neurons, and logic circuits are also discussed. A future roadmap is outlined for realizing the storage applications of MXenes.

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Transformation of MoSe2 to MoSe2-xOy via controlled oxidation for high-performance resistive switching

Khichar,

Hazra

2025

Applied Surface Science

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Bipolar resistive switching behaviour of WS2 thin films grown by chemical vapour deposition

Cited by 4 publications

References 10 publications

Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing

Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing

Emerging MXenes for Functional Memories

Transformation of MoSe2 to MoSe2-xOy via controlled oxidation for high-performance resistive switching

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