Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing

Abstract

The modern-day computing technologies are continuously undergoing a rapid changing landscape; thus, the demands of new memory types are growing that will be fast, energy efficient and durable. The limited scaling capabilities of the conventional memory technologies are pushing the limits of data-intense applications beyond the scope of silicon-based complementary metal oxide semiconductors (CMOS). Resistive random access memory (RRAM) is one of the most suitable emerging memory technologies candidates that have demonstrated potential to replace state-of-the-art integrated electronic devices for advanced computing and digital and analog circuit applications including neuromorphic networks. RRAM has grown in prominence in the recent years due to its simple structure, long retention, high operating speed, ultra-low-power operation capabilities, ability to scale to lower dimensions without affecting the device performance and the possibility of three-dimensional integration for high-density applications. Over the past few years, research has shown RRAM as one of the most suitable candidates for designing efficient, intelligent and secure computing system in the post-CMOS era. In this manuscript, the journey and the device engineering of RRAM with a special focus on the resistive switching mechanism are detailed. This review also focuses on the RRAM based on two-dimensional (2D) materials, as 2D materials offer unique electrical, chemical, mechanical and physical properties owing to their ultrathin, flexible and multilayer structure. Finally, the applications of RRAM in the field of neuromorphic computing are presented.

Emerging memristive artificial neuron and synapse devices for the neuromorphic electronics era

“…130,131 A positive voltage applied to the Ag electrode ionizes the Ag atoms, and the cations then drift under the electrical field towards the counter electrode where they are reduced, forming a microscopic Ag ''hillock'' that serves as a virtual electrode for subsequent reduction of Ag + cations. 129,132,133 A set occurs when the Ag filament extends back and connects the anode. A negative voltage reverses the process by driving Ag + cations back to the Ag electrode, causing a reset.…”

Resistive Mechanisms and Microscopic Electrical Models of Metal Oxide Resistive Memory

“…Metal oxides such as TiO x , [8,9,[40][41][42] NiO x , [32,[43][44][45][46] HfO 2 , [19,29,42] TaO x , [20,47,48] AlO x , [10,49] ZrO 2 , [15][16][17] ZnO x , [11,31,50] CuO, [6,51,52] SiO x , [18,34,53] and others are frequently used as materials for constructing the resistive layer due to their simple structure, larger bandgap, and better compatibility with the CMOS process. [54,55] At the same time, nitride such as AlN, [56,57] ZrN, [58] NiN, [59] and organic materials like Alq 3 [60] exhibit similar RS mechanisms to metal oxides, making them viable options for resistive materials. It is also important to note that metal ions exhibit higher solubility and diffusion coefficient in sulfide materials, such as As 2 S 3 , [61] Ag 2 S, [62] GeTe, [63] Cu 2 S, [64] GeS, [65] Ag-Ge-Se.…”

A Researcher’s Perspective on Unconventional Lab-to-Fab for 2D Semiconductor Devices

“…Nantero, a company mentioned earlier, is developing a CNT-based memory technology called NRAM, which is faster and more energy-efficient than traditional memory technologies like DRAM and NAND . Similarly, TSMC is investigating using 2D materials in resistive random access memory (RRAM) devices, which could provide a more efficient and reliable alternative to conventional memory technologies . The use of nanomaterials in interconnects, the wiring that connects different components within a chip, could enable faster data transfer and reduced power consumption.…”

“…142 Similarly, TSMC is investigating using 2D materials in resistive random access memory (RRAM) devices, which could provide a more efficient and reliable alternative to conventional memory technologies. 143 The use of nanomaterials in interconnects, the wiring that connects different components within a chip, could enable faster data transfer and reduced power consumption. Several companies, including IBM, Intel, Samsung, and GlobalFoundries, have been actively exploring the use of graphene and carbon nanotubes (CNTs) as interconnects in chips.…”