Bipolar resistive switching in individual Au–NiO–Au segmented nanowires

Abstract

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Heterojunction metal-oxide-metal Au-Fe3O4-Au single nanowire device for spintronics

“…Unlike template-free methods, the templateassisted synthesis used here can produce a very large number of nearly identical, high-definition heterojunction MOM nanowires that do not require sorting. 23,24 After extensive heat treatment analysis, it is found that the nanowires annealed at 225 C for 20 h in a controlled atmosphere, 5% H 2 (balance N 2 ) with a 20 sccm flow successfully yielded the Au-Fe 3 O 4 -Au segment. With the above controlled oxidation conditions, Fe segment directly transformed into Fe 3 O 4 .…”

“…23 The inset of Figure 5 shows the low magnification optical micrographs of a typical single MOM nanowire device thus fabricated with the functional Fe 3 O 4 segment with $250 nm thickness and 500 nm in length. Note that the Fe 3 O 4 segment of the MOM nanowire is not attached to the substrate mechanically, and the metal nanowires provide no mechanical constraint, hence no substrate-induced strain is expected in the Fe 3 O 4 segment.…”

“…Note that the Fe 3 O 4 segment of the MOM nanowire is not attached to the substrate mechanically, and the metal nanowires provide no mechanical constraint, hence no substrate-induced strain is expected in the Fe 3 O 4 segment. 23 Figure 5 Figure 6 shows the resistance variation with temperature, derived from I-V plot at a constant voltage bias. Room temperature electrical resistivity of individual heterojunction nanowire is found to be around 6.6 Â 10 À3 X cm, which is comparable to the bulk but higher than epitaxial thin films of Fe 3 O 4 .…”

“…In this context, metal-oxide-metal (MOM) heterojunction nanowires, 23,24 where Fe 3 O 4 nanoscale segment is sandwiched between two similar or dissimilar noble-metal nanowires are more representative of prototypical single nanowire device with high quality electrical contacts, which likely have some distinct advantage over all-oxide Fe 3 O 4 nanowires. This type of geometry provides high quality, end-on electrical contact to the oxide directly circumventing all the device fabrication process.…”

Fabrication of an Array of Ni/NiO Nanowire-ReRAM Using AAO Template on Si

“…Various metal oxides and perovskites have been actively studied as a material for ReRAM [1][2][3][4][5][6][7][8][9]. A metal oxide or perovskite layer, which exhibits resistive switching (RS) phenomenon, is sandwiched between two metal electrodes.…”