2015
DOI: 10.1063/1.4913891
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Heterojunction metal-oxide-metal Au-Fe3O4-Au single nanowire device for spintronics

Abstract: In this report, we present the synthesis of heterojunction magnetite nanowires in alumina template and describe magnetic and electrical properties from a single nanowire device for spintronics applications. Heterojunction Au-Fe-Au nanowire arrays were electrodeposited in porous aluminum oxide templates, and an extensive and controlled heat treatment process converted Fe segment to nanocrystalline cubic magnetite phase with well-defined Au-Fe3O4 interfaces as confirmed by the transmission electron microscopy. M… Show more

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Cited by 5 publications
(6 citation statements)
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“…This distinct thickness dependence of MR and the positive MR at room temperature are discussed in the following by taking into account the nanocomposite Fe 3 O 4 –Fe microstructure of the films. For both Fe and Fe 3 O 4 , a negative MR is expected and usually observed. There are, however, also several reports on positive MR effects in Fe 3 O 4 -based systems such as Fe 3 O 4 nanowires, thin films, nanocomposites, , and heterojunctions . To explain the positive MR effects in such Fe 3 O 4 -based devices, different mechanisms are proposed.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…This distinct thickness dependence of MR and the positive MR at room temperature are discussed in the following by taking into account the nanocomposite Fe 3 O 4 –Fe microstructure of the films. For both Fe and Fe 3 O 4 , a negative MR is expected and usually observed. There are, however, also several reports on positive MR effects in Fe 3 O 4 -based systems such as Fe 3 O 4 nanowires, thin films, nanocomposites, , and heterojunctions . To explain the positive MR effects in such Fe 3 O 4 -based devices, different mechanisms are proposed.…”
Section: Resultsmentioning
confidence: 99%
“…44−49 There are, however, also 50 thin films, 51 nanocomposites, 52,53 and heterojunctions. 54 To explain the positive MR effects in such Fe 3 O 4 -based devices, different mechanisms are proposed. The works of Liao et al 50 and Reddy et al 54 describe a spindependent scattering at the interface between the metal contact and the strongly spin-polarized magnetite, leading to a spin filter effect associated with high contact resistance.…”
Section: ■ Results and Discussionmentioning
confidence: 99%
“…Likewise, a plot of lnR vs 1000/T (Fig. S18 , Supporting Information) elucidate the activation energy (E a ) of L2 as 40 MeV 43 . Impressively, electron transport mechanism has been interpreted from plots of “lnR Vs 1/T” and “conductance Vs T −(1/4) ” via nonlinear and linear fittings, respectively, as shown in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…Upon ploting “lnR Vs 1000/T” (Fig. S18 , Supporting Information), the activation energy (E a ) can be obtained from the slope 43 .…”
Section: Methodsmentioning
confidence: 99%
“…The activation energy [45] of diamond NW portion L2 was calculated by the following Equation:R = R 0 exp (Ea/kT) where R and R 0 are the resistance of L2 with and without applied voltage, respectively, k is the Boltzmann constant and T is temperature in kelvin (K). By plotting the lnR as a function of 1/T (Figure S27 in supporting information), the activation energy (E a ) can be determined from the slope of the curve.…”
Section: Methodsmentioning
confidence: 99%