Bipolar Resistive Switching in the Ag/Sb₂Te₃/Pt Heterojunction

Abstract

A bipolar resistive switching (RS) behavior with an asymmetry I−V curve was impressively observed in the Ag/Sb 2 Te 3 /Pt heterojunction. The heterojunction with low operating voltage (∼0.6 V) could be repeatedly cycled more than 1000 times between high-and low-resistance states steadily, the cumulative probability curves of which were substantially parallel. Numerical simulation was performed to clarify the electrical conduction mechanism of different resistance states. Based on the results, the synergy model of the conductive filament and the Schottky emission is proposed. This work enriches the material system of resistive random access memory, which is conducive to a profound understanding of the physical mechanism behind the RS behavior, thereby facilitating the further application of memristors in the field of synaptic bionics.

Realization of Selector‐Memory Bi‐Functionality with Self‐Current Regulation Utilizing Poly‐Crystalline Based GST Electrolyte for Memristor Hardware Development

“…Recently, chalcogenide materials devices have attracted considerable attention as memory devices. [24][25][26][27][28] Alloys and compounds composed of Ge 2 Sb 2 Te 5 (GST) chalcogenides are major materials used in phase change random access memory [29][30][31] and optical rewritable disks. Chalcogenides are suitable material candidates for realizing CBRAMs because of such unique properties as high ionic conductivity, various structural transformations, stable glass formation, and high defect density.…”

Voltage-Controlled Conversion from CDS to MDS in an Azobenzene-Based Organic Memristor for Information Storage and Logic Operations

“…In order to effectively store and process large amounts of information in the era of big data, continuous efforts have been made to improve memory performance to achieve high-speed operation, low energy consumption, nonvolatility, and high-density integration. − Next-generation memory should have nonvolatility and fast read/write speeds like static random access memory (SRAM) and can overcome the large storage performance gap between different levels of memory like flash memory. Among the next-generation memory technology candidates, including phase change random access memory (PCRAM), magnetoresistive random access memory (MRAM), resistance random access memory (RRAM), and ferroelectric tunnel junction (FTJ), RRAM based on the memristive effect has unique advantages. , Various materials have been found to be suitable as active layers in memristors, including metal oxides, metal sulfides, perovskites, two-dimensional (2D) materials, biomaterials, and organic materials. − Among them, memristors based on organic materials have drawn much attention due to their low cost, ease of fabrication, good flexibility, and compatibility with wearable devices. − …”