Bio-mimetic advanced electronic systems are emerging
rapidly, engrossing
their applications in neuromorphic computing, humanoid robotics, tactile
sensors, and so forth. The biological synaptic and nociceptive functions
are governed by intricate neurotransmitter dynamics that involve both
short-term and long-term plasticity. To emulate the neuronal dynamics
in an electronic device, an Ag/TiO2/Pt/SiO2/Si
memristor is fabricated, exhibiting compliance current controlled
reversible transition of volatile switching (VS) and non-volatile
switching (NVS). The origin of the VS and NVS depends on the diameter
of the conducting filament, which is explained using a field-induced
nucleation theory and validated by temporal current response measurements.
The switching delay of the device is used to determine the characteristic
nociceptive behaviors such as threshold, relaxation, inadaptation,
allodynia, and hyperalgesia. The short-term and long-term retention
loss attributed to the VS and NVS, respectively, is used to emulate
short-term memory and long-term memory of the biological brain in
a single device. More importantly, synergistically modulating the
VS–NVS transition, the complex spike rate-dependent (SRDP)
and spike time-dependent plasticity (STDP) with a weight change of
up to 600% is demonstrated in the same device, which is the highest
reported so far for TiO2 memristors. Furthermore, the device
exhibits very low power consumption, ∼3.76 pJ/spike, and can
imitate synaptic and nociceptive functions. The consolidation of complex
nociceptive and synaptic behavior in a single memristor facilitates
low-power integration of scalable intelligent sensors and neuromorphic
devices.