2014
DOI: 10.1016/j.enbuild.2014.03.079
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BIPV technology application: Highlighting advances, tendencies and solutions through Solar Decathlon Europe houses

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Cited by 59 publications
(33 citation statements)
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“…Furthermore, note the study of screening-engineered field-effect solar cells by Regan et al [118]. Other relevant studies on BIPV may also be found in the scientific literature [119][120][121][122][123][124][125][126][127][128].…”
Section: Various Aspectsmentioning
confidence: 99%
“…Furthermore, note the study of screening-engineered field-effect solar cells by Regan et al [118]. Other relevant studies on BIPV may also be found in the scientific literature [119][120][121][122][123][124][125][126][127][128].…”
Section: Various Aspectsmentioning
confidence: 99%
“…The scientific knowledge behind the Solar Decathlon can be found in a special issue in Energy and Buildings [121], such as passive solutions [122], electrical energy balance [123] and BIPV [124], etc. This competition provide a great opportunity to share the latest design strategies and demonstration of ZEB to the industry and public.…”
Section: Development Trendmentioning
confidence: 99%
“…As matter of fact, many research centers and universities are actively involved as stated by the systems proposed in the Solar Decathlon Europe houses [1]. BIPV systems show important differences respect to large ground-mounted PV plants:…”
Section: Introductionmentioning
confidence: 99%
“…To get jointly a significant parameters and less time computation, we will base on the one diode model, presented in Fig. 1 and described by (1).This model is characterized by five unknown parameters : I ph (light or photo-generated current) represents the charge carrier generation in the semiconductor layer of the PV cell caused by the incident radiation, R sh (parallel, R p ; or shunt resistance) expresses the losses due to the high-current path through the semiconductor throughout the mechanical defects and the leakage current to the ground, R s (series resistance) represents the internal losses due to current flow and the connection between cells, I 0 (diode's reverse-bias saturation current) and (diode ideality factor). where, (thermal module voltage= , (Boltzman's constant = J/K), T (cells temperature, q (electron charge = C), Ns (solar cell number in series) are known parameters.…”
Section: Introductionmentioning
confidence: 99%