Bismuth-doped tin telluride

Tamor, M. A.; Holloway, H.; Ager, R.; Gierczak, C. A.; Carter, R. O.

doi:10.1063/1.338204

Cited by 11 publications

(6 citation statements)

References 16 publications

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“…The carrier concentration has almost no temperature dependence, as predicted from the vacancy model, showing no carrier frozen. These p values are in agreement with those reported in the literature [14][15][16], where the lowest hole concentration obtained for SnTe films grown by MBE was 10 19 cm −3 using special growth conditions [16] or Bi doping, which is an ntype dopant [14]. Fig.…”

Section: Resultssupporting

confidence: 82%

Characterization of SnTe films grown by molecular beam epitaxy

Mengui¹,

Abramof²,

Rappl³

et al. 2006

Braz. J. Phys.

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A series of SnTe layers with thicknesses varying from 0.42 to 9.1 µm were grown by molecular beam epitaxy on (111) BaF 2 substrates. The SnTe lattice parameter was found to be 6.331Å as determined from x-ray diffraction spectra measured in the triple-axis configuration. The FWHM of the (222) SnTe x-ray rocking curves indicated a good crystalline quality and an unusual dependence on layer thickness. Atomic force microscopy (AFM) of the SnTe surface revealed spirals with monolayer steps formed around threading dislocations, similar to the PbTe on BaF 2 epitaxy. The dislocation density was estimated from the AFM picture to be 9x10 8 cm −2 . Small black pits corresponding to holes that were left during growth were also observed on the AFM images. Sn diffusion can be a possible reason for these pits and the relatively high dislocation density. Electrical measurements showed that the SnTe epilayers present a typical p-type carrier concentration around 10 20 cm −3 almost temperature independent and a Hall mobility which decreases from 10 4 to 10 3 cm 2 /V.s as the temperature increases from 10 to 350K.

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Section: Resultssupporting

confidence: 82%

Characterization of SnTe films grown by molecular beam epitaxy

Mengui¹,

Abramof²,

Rappl³

et al. 2006

Braz. J. Phys.

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“…In order to decrease the bulk carrier concentration, we may grow the SnTe in a Sn-rich vapor environment, or dope the SnTe with Bi, Pb, or Sb donors. 18,29,34,[36][37][38] As a new class of topological insulators, TCIs exhibit multiple Dirac-dispersive surface states that are protected by crystal symmetry, not time-reversal symmetry. The presence of multiple surface states, crystal surface dependent band structures, and protection against magnetic fields offer new opportunities to study topological quantum phenomena that are inaccessible in 3D topological insulators with time-reversal symmetry.…”

Section: (C))mentioning

confidence: 99%

Synthesis of SnTe Nanoplates with {100} and {111} Surfaces

Shen¹,

Jung²,

Disa³

et al. 2014

Nano Lett.

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SnTe is a topological crystalline insulator that possesses spin-polarized, Dirac-dispersive surface states protected by crystal symmetry. Multiple surface states exist on the {100}, {110}, and {111} surfaces of SnTe, with the band structure of surface states depending on the mirror symmetry of a particular surface. Thus, to access surface states selectively, it is critical to control the morphology of SnTe such that only desired crystallographic surfaces are present. Here, we grow SnTe nanostructures using vapor-liquid-solid and vapor-solid growth mechanisms. Previously, SnTe nanowires and nanocrystals have been grown [Saghir et al. Cryst. Growth Des. 2014, 14, 2009-2013; Safdar et al. Cryst. Growth Des. 2014, 14, 2502-2509; Safdar et al. Nano Lett. 2013, 13, 5344-5349; Li et al. Nano Lett. 2013, 13, 5443-5448]. In this report, we demonstrate the synthesis of SnTe nanoplates with lateral dimensions spanning tens of micrometers and thicknesses of a few hundred nanometers. The top and bottom surfaces are either (100) or (111), maximizing topological surface states on these surfaces. Magnetotransport on these SnTe nanoplates shows a high bulk carrier density, consistent with bulk SnTe crystals arising due to defects such as Sn vacancies. In addition, we observe a structural phase transition in these nanoplates from the high-temperature rock salt to a low-temperature rhombohedral structure. For nanoplates with a very high carrier density, we observe a slight upturn in resistance at low temperatures, indicating electron-electron interactions.

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“…Among them, the binary amorphous and crystalline SnTe and GeTe compounds are the two compounds of numerous studies [1][2][3][5][6][7][12][13][14]. Although the binary compounds have been well studied and reported, the solid-state property for the crystalline ternary Ge 1Àx Sn x Te is still relatively understood.…”

Section: Introductionmentioning

confidence: 99%

“…IV-VI compounds are promising materials that can be utilized in thermoelectric, optoelectronic and the other applications [1][2][3][4][5][6][7][8][9][10][11][12]. Among them, the binary amorphous and crystalline SnTe and GeTe compounds are the two compounds of numerous studies [1][2][3][5][6][7][12][13][14].…”

Section: Introductionmentioning

confidence: 99%