Thermoelectric properties of Ge1−xSnxTe crystals grown by vertical Bridgman method

Wu, Chi‐Jui; Ferng, N.J.; Gau, Horng-Jyh

doi:10.1016/j.jcrysgro.2007.02.036

Cited by 12 publications

(5 citation statements)

References 22 publications

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“…It is worth noting that the Seebeck coefficient, and accordingly the carrier concentration increase with the increase of the MnO 2 content (Figure b). This is abnormal according to the single parabolic band model and can be explained by the two valence band character of SnTe, − in which the Fermi level is pushed deeper into the valence band due to the higher presence of activated holes, leading to the heavy band taking part in the electrical transport process. Similar results were also discovered in Cd-doped SnTe and Mg-doped SnTe even though they are isovalent, with Sn being an electron acceptor in SnTe.…”

Section: Resultssupporting

confidence: 80%

Facile Route to High-Performance SnTe-Based Thermoelectric Materials: Synergistic Regulation of Electrical and Thermal Transport by In Situ Chemical Reactions

et al. 2019

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In this work, a composite product of Mn-substituted SnTe, SnO 2 nanoparticles, and MnTe-supersaturated precipitates has been fabricated by a simple in situ reaction between SnTe and MnO 2 for the first time. Benefiting from the synergistic effect induced by the product of in situ reaction, a remarkable improvement in the thermoelectric performance has been achieved. On the one hand, Mn substitution in SnTe can effectively modify the band structure and enhance the electrical properties of SnTe; on the other hand, the thermal transport can also be dramatically suppressed by in situ reaction-derived multiscale phonon scattering by point defects, SnO 2 nanoparticles, and supersaturated MnTe precipitates. Ultimately, a maximum ZT of ∼1.5 at 873 K has been achieved in the SnTe + 10 mol % MnO 2 sample, which increases by 224% in comparison with the pristine SnTe, representing one of the best results ever reported for SnTe-based thermoelectric materials.

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Section: Resultssupporting

confidence: 80%

Facile Route to High-Performance SnTe-Based Thermoelectric Materials: Synergistic Regulation of Electrical and Thermal Transport by In Situ Chemical Reactions

et al. 2019

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“…Improvement of the thermoelectric performance is expected with the pseudo-ternary compounds Sn 1Àx Ge x Te [14] and Pb 1Àx Ge x Te [5,15]. Such compounds can be designed to yield improved electronic properties and lower lattice thermal conductivities, as compared to the binary SnTe, PbTe and GeTe compounds.…”

Section: Article In Pressmentioning

confidence: 99%

Phase transitions of p-type (Pb,Sn,Ge)Te-based alloys for thermoelectric applications

Gelbstein¹,

Ben-Yehuda²,

Dashevsky³

et al. 2009

Journal of Crystal Growth

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“…Successful strategies include the involvement of a strong lattice anharmonicity, 3 low phonon velocity, 4,5 point defects, 6,7 dislocations, 8,9 nanostructures, 10,11 and liquid-like ions. 12,13 On the other hand, decoupling the strong correlation among S, r, and k E or an enhancement in power factor, PF = S 2 /r, has also proven to be successful through engineering the band structure 14 for a large band degeneracy by convergence 15,16 and nestification, 17 which has been illustrated in many thermoelectrics including PbTe, 15,18,19 SnTe, [20][21][22] GeTe, 23 Zintl compounds, 24,25 Mg 2 Si, 16,26 half-Heusler, 27,28 and elemental tellurium. 17…”

Section: Introductionmentioning

confidence: 99%

Cu Interstitials Enable Carriers and Dislocations for Thermoelectric Enhancements in n-PbTe0.75Se0.25

Xiao

Nan

et al. 2020

Chem

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Aliovalent defects are extremely effective in manipulating charge transport and atomic vibrational properties for thermoelectric enhancements. Electronic performance of thermoelectrics is optimized at a reduced Fermi level of $0.3, which causes the optimal carrier concentration (n opt) to be strongly temperature dependent. This motivates a dynamic doping approach for electronic enhancements through an increase with temperature of solubility of aliovalent dopants. In addition, the defects could simultaneously act as scattering sources of phonons for reducing the lattice thermal conductivity. These effects are illustrated in this work by the temperature-dependent excess Cu solubility in n-PbTe 0.75 Se 0.25 thermoelectrics, in which both carriers and dislocations are induced for regulating the electronic and phononic transport properties for a realization of an extraordinary thermoelectric figure of merit. The resultant defect structures and temperature gradient doping effects (for aliovalent solutes) could in principle open extra possibilities for optimizing charge and phonon transport properties in thermoelectrics.

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Thermoelectric properties of Ge1−xSnxTe crystals grown by vertical Bridgman method

Cited by 12 publications

References 22 publications

Facile Route to High-Performance SnTe-Based Thermoelectric Materials: Synergistic Regulation of Electrical and Thermal Transport by In Situ Chemical Reactions

Facile Route to High-Performance SnTe-Based Thermoelectric Materials: Synergistic Regulation of Electrical and Thermal Transport by In Situ Chemical Reactions

Phase transitions of p-type (Pb,Sn,Ge)Te-based alloys for thermoelectric applications

Cu Interstitials Enable Carriers and Dislocations for Thermoelectric Enhancements in n-PbTe0.75Se0.25

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