Cu Interstitials Enable Carriers and Dislocations for Thermoelectric Enhancements in n-PbTe0.75Se0.25

Xiao, Youwei; Wu, Yixuan; Nan, Pengfei; Dong, Hongliang; Chen, Zhiwei; Chen, Zhiqiang; Gu, Hongkai; Ge, Binghui; Li, Wen; Pei, Yanzhong

doi:10.1016/j.chempr.2020.01.002

Cited by 86 publications

(77 citation statements)

References 87 publications

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“…The success in boosting the zT ave from 0.84 ( x = 0.01) to 1.01 ( x = 0.02) within the mid‐temperature region reveals that the n ‐type lead tellurides could have a better TE performance than what had been previously reported (Table S1, Supporting Information). [ 6,8,10,11,24–26,31,41–56 ] The breakthrough shall be attributed to their microstructures and phases, in which a phase diagram could interpret the relationship. Figure a shows the isothermal section of ternary Pb‐Te‐Ga at 673 K, which is constructed by an experimental approach.…”

Section: Resultsmentioning

confidence: 99%

From Dislocation to Nano‐Precipitation: Evolution to Low Thermal Conductivity and High Thermoelectric Performance in n‐Type PbTe

Deng

Wang

et al. 2020

Adv Funct Materials

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PbTe-based alloys have been widely used as mid-temperature thermoelectric (TE) materials since the 1960s. Years of endeavor spurred the tremendous advances in their TE performance. The breakthroughs for n-type PbTe have been somewhat less impressive, which limits the overall conversion efficiency of a PbTe-based TE device. In light of this obstacle, an n-type Ga-doped PbTe via an alternative thermodynamic route that relies on the equilibrium phase diagram and microstructural evolution is revisited. Herein, a plateau of zT = 1.2 is achieved in the best-performing Ga 0.02 Pb 0.98 Te in the temperature range of 550-673 K. Notably, an extremely high average zT ave = 1.01 is obtained within 300 − 673 K. The addition of gallium optimizes the carrier concentration and boosts the power factor PF = S 2 ρ −1. Meanwhile, the κ L of Ga-PbTe reveals a significantly decreasing tendency owing to the defect evolution that changes from dislocation loop to nano-precipitation with increasing Ga content. The pathway for both the κ L reduction and defect evolution can be probed by an equilibrium phase diagram, which opens up a new avenue for locating high zT TE materials.

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Section: Resultsmentioning

confidence: 99%

From Dislocation to Nano‐Precipitation: Evolution to Low Thermal Conductivity and High Thermoelectric Performance in n‐Type PbTe

Deng

Wang

et al. 2020

Adv Funct Materials

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“…Dislocations have been proven as one of the most effective sources for phonon scattering. [30,[50][51][52] As compared with the matrix material Na 0.03 Eu 0.03 Pb 0.94 Te, a lower lattice thermal conductivity due to PbSe alloying can be expected, because of the extra phonon scattering by Se/Te substitutional point defects.…”

Section: Resultsmentioning

confidence: 99%

“…into semiconductors by liquid-phase compacting [28] and vacancy/ interstitial defect aggregations. [50,51] This enables a remarkable reduction in κ L , with a dominant contribution from the strong fluctuations in lattice strain. [30,52] Importantly, in-grain dislocations have been found to lead to a negligibly detrimental effect on carrier scattering in the working temperature range.…”

Section: Introductionmentioning

confidence: 99%

“…[30,52] Importantly, in-grain dislocations have been found to lead to a negligibly detrimental effect on carrier scattering in the working temperature range. [30,51] Cosubstitution of Na and Eu at Pb site is an efficient approach to introduce dense dislocations in p-type PbTe, which results in a significant κ L reduction. [48] Simultaneously, Eu substitution decreases the valence band offset ΔE between L and Σ, and thus enhances the electronic performance.…”

Section: Introductionmentioning

confidence: 99%

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Manipulation of Defects for High‐Performance Thermoelectric PbTe‐Based Alloys

Zhou

Chen

et al. 2021

Small Structures

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0D Point defects, 1D dislocations and 2D interfaces act as effective sources for scattering phonons due to the fluctuations in atomic mass and lattice strain. Dislocations have been demonstrated recently to enable a significant reduction in lattice thermal conductivity of PbTe, and a co‐substitution of Eu and Na at Pb site was found to effectively introduce dense in‐grain dislocations in p‐PbTe. This motivates this work to focus on a further PbSe alloying in Na0.03Eu0.03Pb0.94Te for introducing point defects in addition to these dislocations, with participation of a further reduction in lattice thermal conductivity. The resultant extremely low lattice thermal conductivity (a minimum of ≈0.4 W m−1 K−1) in the entire temperature range leads to an eventual ≈30% enhancement in the average thermoelectric figure of merit zT in the working temperature range and a peak zT as high as ≈2.3 at 850 K in Na0.03Eu0.03Pb0.94Te0.9Se0.1.

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“…Among these potential strategies, the phase diagram engineering emerges as a new approach to disclose the relationship between the TE performance, microstructure, and phase stability. [ 143,153,154 ] As known, the stoichiometry in the pristine PbTe significantly affects its transport properties given that it only tolerates a small mutual solubility. [ 154 ] As further revealed by a density functional theory (DFT) calculation, [ 155 ] the vacancies (

{normalV}_{Te}^{+ 2}

{normalV}_{Pb}^{- 2}

) have lower formation energies rather than antisite or interstitial defects.…”

Section: Revisiting the State‐of‐the‐art Te Alloys Via Phase Diagram Engineeringmentioning

confidence: 99%

Eliciting High‐Performance Thermoelectric Materials via Phase Diagram Engineering: A Review

Deng

Yen

Tsai

et al. 2021

Adv Energy and Sustain Res

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Alongside the evolution of technology timeline, environmental protection and energy sustainability significantly guide the research feast toward the high-performance green energy resources and technologies. [1,2] Alternatives to the fossil fuels that emit harmful greenhouse gases become desired, in which the thermoelectric (TE) materials have played an inevitable role since the 1960s. [3] One of TE technology features is the waste heat recovery via the Seebeck effect, [4] which allows the conversion between thermal energy and electricity. Such a TE generator produces precious electrical energy from any arbitrary interfaces where a temperature gradient exists, simultaneously boosting energy usage efficiency while eases global warming.Many TE materials are being explored for power generation applications, such as GeTe, [5] PbTe, [6,7] Bi 2 Te 3 , [8] and silicides. [9] Moreover, the TE cooler, which utilizes the Peltier effect, [4] emerges as a vital spot-cooling device assembled by all-solid-state materials. With the advantages of refrigerant-free and size-minimization, the TE cooler exhibits the advantages of refrigerant-free and size-minimization, which can be used as the next-generation cooling technology. [10] After more than 60 years of development, the practical application and potential coverage of TE technology are comprehensive. Nevertheless, a TE material's thermal-to-electric efficiency is still required to be boosted. In general, the TE figure-of-merit zT ¼ ðS 2 σÞT=κ positively relates to the performance of TE materials, in which the S is the Seebeck coefficient, σ ¼ ρ À1 refers to the electrical conductivity, and κ ¼ κ e þ κ L þ κ b comprises the total thermal conductivity κ, lattice thermal conductivity κ, and bipolar thermal conductivity κ b , respectively. Most importantly, the S, σ, and κ e have the carrier concentration n H as a common factor, which correlates and depends on each other. Therefore, the counterbalance between the thermal and electrical transport properties is essential to attain high zT values, which could be fulfilled by band structure engineering, [11] carrier optimization, [12,13] filtering effect, [14] , and so on. In parallel, the reduction in κ L also paves the way toward highperformance TE materials, mainly accomplished by all-scale defect engineering [15] and alloying effect. [16] Those imperfections introduce multiscale roadblocks, such as the interstitial/ antisite defect, dislocations, nanoprecipitates, and grain boundaries, aiming to impede the phonons with different wavelengths.Countless efforts bring the breakthroughs of zT value in succession. The peak zT grows less than unity in the 1960s to greater than 2.5 after 2015, [17] whose progress is slow yet steadily. Complex TE materials with various dopants are the primary targets, while different approaches can be adopted. [18,19] The

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Cu Interstitials Enable Carriers and Dislocations for Thermoelectric Enhancements in n-PbTe0.75Se0.25

Cited by 86 publications

References 87 publications

From Dislocation to Nano‐Precipitation: Evolution to Low Thermal Conductivity and High Thermoelectric Performance in n‐Type PbTe

From Dislocation to Nano‐Precipitation: Evolution to Low Thermal Conductivity and High Thermoelectric Performance in n‐Type PbTe

Manipulation of Defects for High‐Performance Thermoelectric PbTe‐Based Alloys

Eliciting High‐Performance Thermoelectric Materials via Phase Diagram Engineering: A Review

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