1998
DOI: 10.1063/1.368514
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Bistable behavior of a medium-deep center related to EL5 and EL6 in n-type bulk GaAs

Abstract: We report characteristic behaviors of medium-deep electron traps (EL5, EL6, etc.) in n-type bulk GaAs crystals observed by isothermal constant-capacitance–voltage transient spectroscopy (CCVTS). Each CCVTS spectrum of EL5 and EL6 was broader than a theoretical one expected for a single level, and was found to consist of more than two trap components. Anomalous filling time dependence of CCVTS peak heights for these traps was observed when the filling pulse width was varied in a wide range, i.e., one component … Show more

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Cited by 23 publications
(10 citation statements)
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“… 39 . The M3 (EL6) trap is commonly associated with a native pair defect, consisting of two point defects: the arsenic antisite (As Ga ), and unknown X EL6 40 , for which the gallium vacancy (V Ga ) 41 and arsenic vacancy (V As ) 42 were proposed as the possible candidates. Moreover, the EL6 trap was also previously identified as divacancy complex defect (V Ga − V As ) by Fang et al .…”
Section: Resultsmentioning
confidence: 99%
“… 39 . The M3 (EL6) trap is commonly associated with a native pair defect, consisting of two point defects: the arsenic antisite (As Ga ), and unknown X EL6 40 , for which the gallium vacancy (V Ga ) 41 and arsenic vacancy (V As ) 42 were proposed as the possible candidates. Moreover, the EL6 trap was also previously identified as divacancy complex defect (V Ga − V As ) by Fang et al .…”
Section: Resultsmentioning
confidence: 99%
“…The macroscopic structure of the EL3 is usually determined as the off-centre substitutional oxygen on the arsenic site (O As ) [31,32] or it is related to the As vacancy (V As ) [33,34]. On the other hand, EL6 is commonly associated with native complex defects involving arsenic antisite (As Ga ) and electronically shallower center, as gallium or arsenic vacancy (V Ga ,V As ) [33][34][35]. These defects are generally regarded by some authors as the possible candidates for major recombination centers in GaAsbased alloys [33,36].…”
Section: Resultsmentioning
confidence: 99%
“…Both 0.4 and 0.7 eV trap states are well known and belong to the defects denoted as EL2 and EL5, respectively. The trap state with the activation energy of 0.411 eV is assigned to the complex defect involving the arsenic antisite, usually denoted as EL2 [ 25 ]. The trap state with the activation energy of 0.694 eV belongs to the Ga vacancy or Ga-As divacancy, known as EL5 [ 26 ].…”
Section: Resultsmentioning
confidence: 99%