Bistable electrical switching and performance of a pentacene-based write once/read many memory device

Abstract

In this paper, the performance of a pentacene-based write once/read many memory device is reported. The IV characteristics of a pentacene device deposited at 5Å/s on an ITO-coated glass substrate was studied. This device showed a stable switching from ON to OFF state with an ON-OFF current ratio of nearly 10 3 and a retention time of 5 × 10 4 s with a switching threshold voltage of 3.9 V. The irreversible switching of this device makes it suitable for write once/read many memory devices. The structural studies of pentacene thin films on glass substrate were also done and the dependence of device performance on grain size is reported. Improved performance of this device due to the addition of C 60 layer is also discussed.

Modification of nanoscale thermal oxide films formed on indium phosphide under the influence of tin dioxide

“…In particular, organic recording devices with an active layer located between two electrodes are becoming more popular. The use of ITO is determined by the low power consumption of these devices and simplicity of its production [15]. Today, there are recording devices, the basis of which is amorphous ITO, allowing extending the lifetime of such devices [16].…”