Black phosphorus-based nanohybrids for energy storage, catalysis, sensors, electronic/photonic devices, and tribological applications

Fan, Shuangqing; Li, Jing; Cao, Hao-Qiang; Liu, Xuhai; Liu, Tong; Xu, Ting; Su, Jie

doi:10.1039/d2tc02355e

Cited by 17 publications

(7 citation statements)

References 228 publications

(292 reference statements)

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“…One of the earliest methods of fabricating 2D materials is the exfoliation of monolayer graphene. With a thorough investigation of graphene and its related variants as well as other 2D materials with an analogous arrangement, such as the hexagonal boron nitride (h-BN), 112 TMDCs, 113 and “BP”, 114 mechanically exfoliated and incredibly nano structural devices with remarkable performance were produced. The excellent optical and optoelectronic capabilities of these 2D materials have attracted increased attention in the study of optoelectronic devices.…”

Section: Preparation Techniques For Heterojunctionsmentioning

confidence: 99%

Contemporary innovations in two-dimensional transition metal dichalcogenide-based P–N junctions for optoelectronics

Elahi,

Ahmad,

Dahshan

et al. 2024

Nanoscale

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Section: Preparation Techniques For Heterojunctionsmentioning

confidence: 99%

Contemporary innovations in two-dimensional transition metal dichalcogenide-based P–N junctions for optoelectronics

Elahi,

Ahmad,

Dahshan

et al. 2024

Nanoscale

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“…Under the same gate voltage, less channel current can be produced in the devices, resulting in the backward drift of the transfer curve of the device, thus leading to an "erasing state." [44][45][46][47] Kelvin probe force microscopy (KPFM) was further used for real-space imaging of the charge carrier trapping process to investigate the trapping and de-trapping ability of the devices with polymer CP2 dielectric. As shown in Figure S16, Supporting Information, the average surface potential gradually increases at the scanning tip by −20 or +10, +15, +20 V bias to verify the electrons/holes trapping process, which is in agreement with the implications of holes accumulation from transfer characteristic results.…”

Section: Integrated Device Applicationsmentioning

confidence: 99%

Newly Synthesized High‐k Polymeric Dielectrics with Cyclic Carbonate Functionality for Highly Stability Organic Field‐Effect Transistor Applications

Liu

et al. 2022

Adv Elect Materials

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Organic field‐effect transistors (OFETs) with low‐voltage‐operating high‐stability are regarded as one of the key components of future electronics. However, it remains a challenge to enhance bias–stress stability, mechanical durability and environmental adaptability while reducing the operating voltage of the flexible OFETs. In this study, a new strategy of introducing high‐dipole‐moment groups into polymer side chains to enhance the intensity of polarization was proposed. This strategy can redirect cyclic carbonate side chains of high‐dipole groups under the action of electric fields and realize stable operation and efficient charge transfer. The experiments showed that high‐performance flexible OFETs were mainly attributed to the synthesized polymers through molecular structure designing which not only have high dielectric constant (k > 5) and high electrical insulating property but also favor the growth of organic semiconductor films. The flexible OFETs still showed excellent mechanical flexibility, high electrical, thermal and humidity stability. In addition, highly OFETs were applied into a floating‐gate memory with fullerene (C60) embedded charge memory layer and an integrated one‐transistor‐one‐transistor memory cell. They exhibited excellent memory performance with a large memory window (8.5 V), current ratio (103), stable retention (2 × 104 s), cyclic endurance (200 cycles), multi‐level memory (over 4 levels) and non‐destructivity.

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“…[ 10 ] However, these reported systems have biological signal acquisition and signal processing parts separated, and the latter of which was usually based on classical von Neumann systems consuming a considerable amount of time and power. [ 11–16 ] Future development of intelligent HMI systems requires near‐sensor or in‐sensor neural computing solutions to allow real‐time sensory processing with low communication latency and low power consumption. In this sense, there is a great need to develop intelligent neuromuscular systems with intrinsic capabilities of neuromorphic perception and recognition, preferably implemented at the device level.…”

Section: Introductionmentioning

confidence: 99%

An Artificial Neuromuscular System for Bimodal Human–Machine Interaction

Geng

Fan

et al. 2023

Adv Funct Materials

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Neuromuscular system enabled muscle functions are critical for body movements, such as rhythmic motions and other complexed movements. Imparting artificial neuromuscular system to advanced robots and interactive systems can potentially improve their sensorimotor coordination and interactivity.Here, an artificial neuromuscular system is reported to mimic the sensing, processing, and manipulation of neuromuscular information, which consists of a triboelectric nano-generator (TENG), SnErO x neuromorphic transistors (SENTs), and the signal-converting system. The synaptic performance of the SENT is optimized to implement multiple operation modes of muscle upon receiving signals from TENG, including muscle contraction, fast/slow muscle fiber shift, conscious/unconscious muscle movements, and transformation. As a proof-of-concept demonstration, the artificial neuromuscular system is used to develop contact human-machine interaction (HMI) by decoding the surface electromyogram (sEMG) and non-contact HMI based on supercapacitive iontronic effect. Importantly, both HMI demonstrate real-time gesture recognition and robotic manipulation, indicating the potential of developing next-generation smart electronics that desire multiple interaction patterns.

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Black phosphorus-based nanohybrids for energy storage, catalysis, sensors, electronic/photonic devices, and tribological applications

Abstract: Black phosphorus (BP) has many unique properties including layer-dependent bandgap, high carrier mobility, large on-off current ratios, and distinctive anisotropy, making it suitable for nanoelectronic and optoelectronic devices. To overcome...

Cited by 17 publications

References 228 publications

Contemporary innovations in two-dimensional transition metal dichalcogenide-based P–N junctions for optoelectronics

Contemporary innovations in two-dimensional transition metal dichalcogenide-based P–N junctions for optoelectronics

Newly Synthesized High‐k Polymeric Dielectrics with Cyclic Carbonate Functionality for Highly Stability Organic Field‐Effect Transistor Applications

An Artificial Neuromuscular System for Bimodal Human–Machine Interaction

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