Black Phosphorus-IGZO van der Waals Diode with Low-Resistivity Metal Contacts

Abstract

There have been a few studies of heterojunctions composed of two-dimensional transition-metal dichalcogenides (TMDs) and an oxide layer, but such studies of high-performance electric and optoelectronic devices are essential. Such heterojunctions with low-resistivity metal contacts are needed by the electronics industry to fabricate efficient diodes and photovoltaic devices. Here, a van der Waals heterojunction composed of p-type black phosphorus (p-BP) and n-type indium–gallium–zinc oxide (n-IGZO) films with low-resistivity metal contacts is reported, and it demonstrates high rectification. The low off-state leakage current in the thick IGZO film accounts for the high rectification ratio in a sharp interface of p-BP/n-IGZO devices. For electrostatic gate control, an ionic liquid is introduced to achieve a high rectification ratio of 9.1 × 104. The photovoltaic measurements of p-BP/n-IGZO show fast rise and decay times, significant open-circuit voltage and short-circuit current, and a high photoresponsivity of 418 mA/W with a substantial external quantum efficiency of 12.1%. The electric and optoelectronic characteristics of TMDs/oxide layer van der Waals heterojunctions are attractive for industrial applications in the near future.

Thickness‐Dependent, Gate‐Tunable Rectification and Highly Sensitive Photovoltaic Behavior of Heterostructured GeSe/WS2 p–n Diode

“…As the thickness of WS 2 increased, the forward current increased, suppressing the reverse leakage current, resulting in a better rectification ratio. [ 3,10 ]…”

“…As the thickness of WS 2 increased, the forward current increased, suppressing the reverse leakage current, resulting in a better rectification ratio. [3,10] Previous studies suggest the increase in WS 2 layers results in a reduction of bandgap and CBM gradually falls (relative to the vacuum level). [16] Moreover, the band alignment of 2D heterostructure is determined by the vdW interaction at the interface, without major changes in the unique band structure.…”

“…[ 2 ] Particularly, the semiconducting TMDCs exhibit compelling photovoltaic characteristics because of their tunable bandgap and relatively high mobilities. [ 3 ] Until now, the researchers have particularly focused on the electrical and photovoltaic properties of the II‐VI compounds because of their excellent quantum‐size effects and stable electrical behavior. Conversely, the IV‐VI p‐type TMDs, particularly GeSe, did not receive much attention despite their potential applications in photovoltaics (PV), transparent thin‐film transistors, memristors, and flexible electronics.…”

Physical Processes during the Formation of Silicon-Lithium p-i-n Structures Using Double-Sided Diffusion and Drift Methods

“…In industrial detectors of large diameters obtained by the traditional method, fluctuations of the leakage current and charge collection time are noticed, thereby deteriorating the energy characteristics of the detector [ 32 , 33 ]. Small values of leakage current and a smooth current–voltage characteristic (shown in Figure 10 ) proves a uniform distribution of charge carriers, in other words, uniform compensation, throughout the volume of the crystal [ 34 , 35 ]. It is due to the fact that in double-sided drift, the path of the carriers is reduced by two and the drift time by four times.…”

Metal oxide semiconductor-based Schottky diodes: a review of recent advances

“…Seol et al [9] have recognized that the contact of semiconductor with metal provides two types of the junction, namely: the ohmic junction or the rectifying (Schottky) junction. In an ohmic junction, the current (I) changes linearly with the applied voltage (V) and follows Ohm's law [10].…”