Black Phosphorus/Molybdenum Diselenide Heterojunction-Based Photodetector

Optoelectronic Properties of Hexagonal Boron Nitride Shielded Molybdenum Diselenide/Black-Phosphorus Based Heterojunction Field Effect Transistor

“…In this study, we improved the structure of our previous photodetector based on n-MoSe 2 /p-BP [14], where the observed photoresponsivity values can be explained based on the Schottky barrier between MoSe 2 and metallic electrodes. In this study, we added multilayered Gr between MoSe 2 and a metallic electrode and successfully improved the performance of a Gr/MoSe 2 -based photodetector.…”

“…Figure S1c shows a schematic illustration of the device before and after shielding. The current device was annealed at 200 • C for 5 min under nitrogen gas to improve the contact quality, unlike the procedure reported in [14]. We used a Hitachi S-4800 instrument to perform scanning electron microscopy (SEM) imaging and a Park NX20 atomic force microscope to acquire atomic force microscopy (AFM) images.…”

“…BP-based heterojunctions have been investigated for photocatalytic water splitting [10], tunable multivalued logic devices [11], mid-infrared light-emission applications [9], carbon dioxide (CO 2 ) reduction [12], and broadband photodetectors [13]. A black-phosphorus/molybdenum diselenide heterojunction (n-MoSe 2 /p-BP) was prepared and investigated for low-power photodetection applications for the first time by our group, where the device demonstrated a photoresponsivity, an external quantum efficiency, a normalized photocurrent-to-dark-current ratio, and a specific detectivity of 3.2 mAW −1 , 31.4 × 10 12 W −1 , 0.74%, and 1.4 × cmHz 1/2 W −1 , respectively, at an extremely low polarization voltage [14].…”

2D Nanomaterials from Group VA Single-element: Research Progress in Biomedical Fields

“…长期以来, 不稳定性一直是黑磷纳米材料实际 应用的主要挑战。黑磷材料的不稳定性主要表现在 降解和聚集上。目前, 人们已开发了多种方法来功 能化黑磷表面, 包括使用溶剂壳、有机配体、聚合 物和其他纳米材料。该功能化不仅可控制黑磷在周 围环境、生物体液中的稳定性, 而且是控制其表面 疏水性、电荷和缺陷的基础, 还可以有效提升黑磷 纳米材料的生物相容性。 使用有机溶剂作为钝化层封装黑磷表面是最常 见的物理保护途径, 是将黑磷与周围环境隔离的最 简单手段。据报道 [51] 黑磷在环己基-2-吡咯烷酮中非 常稳定。尽管目前仍然缺乏溶剂化外壳对黑磷的生 物效应影响的系统研究, 但这种封装非常有益于黑 磷更进一步走向临床应用。 在使用黑磷量子点作为光热剂的早期研究中, 有机聚合物也已用于黑磷功能化。聚乙二醇(Polyethylene Glycol, PEG) 和 聚 乳 酸 -羟 基 乙 酸 共 聚 物 (Poly (lactic-co-glycolic Acid), PLGA)修饰均可显著 增强黑磷量子点在生理条件下的稳定性和分散性, 而不会影响其优异的光热性能 [52][53] 。此外, 聚合物 修饰的黑磷量子点在各种细胞系中均表现出良好的 生物相容性。研究指出, 黑磷与有机聚合物通过库 仑相互作用的非共价修饰显著提高了样品在磷酸缓 冲液和血清中的稳定性, 而未修饰的对应物通常在 数小时后就出现降解 [54] 。 使用其他二维材料覆盖黑磷薄片组成杂化体结 构也可用作提高黑磷稳定性手段。 各种二维材料层(包 括 MoSe 2 /WSe 2 、六方氮化硼、石墨烯、MoS 2 、SiO 2 和 HfO 2 )都已成功用于构建该类黑磷杂化体 [5,[55][56][57][58][59][60][61] 。…”

Low Power Consumption Gate-Tunable WSe2/SnSe2 van der Waals Tunnel Field-Effect Transistor

“…In particular, tungsten diselenide (WSe 2 ), which is an intrinsic semiconductor [14] with an energy band gap of 1.2 eV for its bulk form (up to 1.65 eV for the monolayer) [15,16], and tin diselenide (SnSe 2 ), which is degenerately n-doped with an energy bandgap of 1.0 eV [17], are appropriate for such applications. Two-dimensional black phosphorus (BP) is promising for low-power-consumption electronic devices [18]. BP has an infrared band gap energy of ~0.3 eV (bulk), which is tunable to ~2 eV (monolayer) by reducing the layer thickness [19] and goes down to 0.05 eV by electric field modulation [20].…”