Optoelectronic Properties of Hexagonal Boron Nitride Shielded Molybdenum Diselenide/Black-Phosphorus Based Heterojunction Field Effect Transistor

Abstract

Herein, we report the fabrication of a novel heterojunction field-effect transistor (HJFET) based on two-dimensional graphene (Gr), molybdenum diselenide (MoSe2), and black phosphorus (BP) that is shielded using hexagonal boron nitride to prevent device degradation. We perform electrical and optoelectronic characterizations of Gr/n-MoSe2 and Gr/n-MoSe2/p-BP heterojunctions. Heterojunction n-MoSe2/p-BP exhibits a potential barrier at the interface, which allows the use of BP as a top-gate contact to adjust the electrical and optoelectronic performances of the Gr/n-MoSe2 heterojunction. In the absence of a gate voltage, the Gr/n-MoSe2 and Gr/n-MoSe2/p-BP heterojunctions indicate photoresponsivity (Rλ) and specific detectivity (D*) of 1.77 AW−1 and 1.4 × 1010 cmHz1/2W−1, and 0.8 AW−1 and 0.3 × 1010 cmHz1/2W−1, respectively. The Gr/n-MoSe2 junction field-effect transistor with p-BP as gate contact demonstrates the best optoelectronic performance with high stability in terms of photoresponsivity Rλmax = 3.37 AW−1 and specific detectivity D*max = 3.16 × 1010 cmHz1/2W−1, rendering it extremely promising for photodetection applications.

2D Gallium Sulfide-Based 1D Photonic Crystal Biosensor for Glucose Concentration Detection

“…Two-dimensional (2D) materials, consisting of atomically thin layers, are the best candidates for the fabrication of 1D photonic crystals thanks to their unique and tunable optical properties, as previously reported in our research [19][20][21]. Furthermore, they can be easily deposited and controlled in terms of thickness and number of layers, allowing for precise tuning of the photonic bandgap.…”