“Black Silicon” Formation by Nd:YAG Laser Radiation

Medvíd, A.; Onufrijevs, Pāvels; Daukšta, Edvīns; Kyslyi, Volodymyr

doi:10.4028/www.scientific.net/amr.222.44

Cited by 2 publications

(4 citation statements)

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“…We proposed a new laser method, which is simpler and cheaper comparison with above-mentioned methods [11]. …”

Section: Resultsmentioning

confidence: 99%

“…The further increase of the laser intensity and number of pulses lead to the formation of cone-like microstructures and maximal height of the cone of about 100 μm. The control of the microcone shape and height was achieved by changing the intensity of laser radiation and a number of pulses (Figure 6b,c) [11]. …”

Section: Resultsmentioning

confidence: 99%

“…The 1D-graded band gap structure in elementary semiconductors was formed due to quantum confinement effect [8]. Furthermore, it has been shown that irradiation by laser of Si single crystal with intensity which exceeds melting of material leads to formation of microcones, which are possible to use for solar cells, the so-called black Si [11]. The lack of understanding of the interaction effects of laser radiation with a semiconductor limits laser technology application in microelectronics [12].…”

Section: Introductionmentioning

confidence: 99%

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Formation mechanisms of nano and microcones by laser radiation on surfaces of Si, Ge, and SiGe crystals

Medvíd

Onufrijevs

Jarimaviciute-Gudaitiene

et al. 2013

Nanoscale Res Lett

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In this work we study the mechanisms of laser radiation interaction with elementary semiconductors such as Si and Ge and their solid solution SiGe. As a result of this investigation, the mechanisms of nanocones and microcones formation on a surface of semiconductor were proposed. We have shown the possibility to control the size and the shape of cones both by the laser. The main reason for the formation of nanocones is the mechanical compressive stresses due to the atoms’ redistribution caused by the gradient of temperature induced by strongly absorbed laser radiation. According to our investigation, the nanocone formation mechanism in semiconductors is characterized by two stages. The first stage is characterized by formation of a p-n junction for elementary semiconductors or of a Ge/Si heterojunction for SiGe solid solution. The generation and redistribution of intrinsic point defects in elementary semiconductors and Ge atoms concentration on the irradiated surface of SiGe solid solution in temperature gradient field take place at this stage due to the thermogradient effect which is caused by strongly absorbed laser radiation. The second stage is characterized by formation of nanocones due to mechanical plastic deformation of the compressed Ge layer on Si. Moreover, a new 1D-graded band gap structure in elementary semiconductors due to quantum confinement effect was formed. For the formation of microcones Ni/Si structure was used. The mechanism of the formation of microcones is characterized by two stages as well. The first stage is the melting of Ni film after irradiation by laser beam and formation of Ni islands due to surface tension force. The second step is the melting of Ni and subsequent manifestations of Marangoni effect with the growth of microcones.

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“…We proposed a new laser method, which is simpler and cheaper comparison with above-mentioned methods [11]. …”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Formation mechanisms of nano and microcones by laser radiation on surfaces of Si, Ge, and SiGe crystals

Medvíd

Onufrijevs

Jarimaviciute-Gudaitiene

et al. 2013

Nanoscale Res Lett

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“…In the same year IBM patented the fabrication of black silicon by reactive ion etching (RIE) in sulfur hexafluoride (SF 6 ) and Cl 2 atmosphere with the focus on solar cell fabrication [14]. Furthermore, the structuring can be achieved with femtoseconds, picoseconds, as well as nanosecond pulses [18][19][20] and a variety of ambient conditions [19]. Owing to advances in the availability of laser sources, the interest in nanostructured silicon interfaces fabricated by ultra-short laser pulses strongly increased during the past years.…”

Section: Fabrication Methodsmentioning

confidence: 99%

Black Silicon Photovoltaics

Füchsel

Kröll

Otto

et al. 2015

Photon Management in Solar Cells

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The name "black silicon" refers to all randomly structured silicon interfaces with lateral feature sizes in the submicron range and aspect ratios (structure height/lateral feature size) larger than one. There are a variety of possibilities to achieve a black silicon structure at the silicon interface. From a historical point of view the development is a result of integrated circuit technologies, especially the structuring of silicon by plasma and dry etching processes. Reactive ion etching (RIE) processes seem to be promising candidates for the structuring of solar cells. The structure evolution of black silicon under repeated pulsed laser irradiation can be understood as an interference effect. The light trapping properties of the investigated black silicon structures depend strongly on the feature size of the structures. As a result of the excellent light trapping, high short-circuit currents are a common property of almost all cell concepts

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“Black Silicon” Formation by Nd:YAG Laser Radiation

Cited by 2 publications

References 4 publications

Formation mechanisms of nano and microcones by laser radiation on surfaces of Si, Ge, and SiGe crystals

Formation mechanisms of nano and microcones by laser radiation on surfaces of Si, Ge, and SiGe crystals

Black Silicon Photovoltaics

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