Black silicon with high density and high aspect ratio nanowhiskers

Kalem, Ş.; Werner, P.; Arthursson, Ö.; Talalaev, V. G.; Nilsson, B.; Hagberg, Mats; Frederiksen, Henrik; Södervall, U.

doi:10.1088/0957-4484/22/23/235307

Cited by 34 publications

(25 citation statements)

References 59 publications

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“…11,17,19,[43][44][45][46] In addition, also pure optical applications like silicon lenses or windows for the IR and light absorbers 47 can greatly benefit from the exceptionally good antireflection effect induced by the needle-like Black Silicon nanostructure. Among the multitude of fabrication methods for Black Silicon, ICP-RIE seems to be the most reasonable choice for most of the named applications because of its very good repeatability and reliability, the excellent chemical and structural intactness of the produced structures, 20,48 and its applicability to all forms of silicon, irrespective of the degree of structural order. 16 However, different applications make different demands on the morphology of suitable Black Silicon nanostructures which can be hard to meet.…”

Section: Discussionmentioning

confidence: 99%

The structural and optical properties of black silicon by inductively coupled plasma reactive ion etching

Steglich

Käsebier

Zilk

et al. 2014

Journal of Applied Physics

114

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Black Silicon nanostructures are fabricated by Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE) in a gas mixture of SF6 and O2 at non-cryogenic temperatures. The structure evolution and the dependency of final structure geometry on the main processing parameters gas composition and working pressure are investigated and explained comprehensively. The optical properties of the produced Black Silicon structures, a distinct antireflection and light trapping effect, are resolved by optical spectroscopy and conclusively illustrated by optical simulations of accurate models of the real nanostructures. By that the structure sidewall roughness is found to be critical for an elevated reflectance of Black Silicon resulting from non-optimized etching processes. By analysis of a multitude of structures fabricated under different conditions, approximate limits for the range of feasible nanostructure geometries are derived. Finally, the technological applicability of Black Silicon fabrication by ICP-RIE is discussed

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Section: Discussionmentioning

confidence: 99%

The structural and optical properties of black silicon by inductively coupled plasma reactive ion etching

Steglich

Käsebier

Zilk

et al. 2014

Journal of Applied Physics

114

View full text Add to dashboard Cite

show abstract

“…[1][2][3] The so-called 'Black Silicon' (b-Si) describes nano or micro textured silicon surfaces, 4 it can be produced by Si surface etching using plasma technique, which is compatible with the silicon fabrication technology. [4][5][6][7][8] Plasma is a versatile and environmentally friendly technique which uses gases as reactants to modify materials surface. Gas discharges environments have active species such as ions, free radicals, electrons, molecular fragments and photons that are simultaneously generated and can induce surface modification of different materials.…”

Section: Introductionmentioning

confidence: 99%

Silicon Nanostructuring Using SF6/O2 Downstram Plasma Etching: Morphological, Optical and Sensing Properties

et al. 2018

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Silicon (Si) nanostructures were prepared in the downstream of radiofrequency SF 6 /O 2 mixture plasma generated in 13.56 MHz hollow cathode discharge system. Depending on the oxygen percentage in the mixture, the obtained Si nanostructures were characterized for their different properties: etching rate, morphology, optical reflectance, photoluminescence, spectral response and humidity sensing. It is found that the etching rate exhibits a maximum value when the O 2 ratio reaches 5%. An interesting defect-induced "violet" luminescence is reported from the Si nanostructures, whose intensity depends on their density. The obtained Si nanostructures have shown to induce a spectral response (SR) enhancement, in comparison with a smooth Si substrate, of about 100 times at 1100 nm wavelength. A very short response time (1 sec) to the humidity was measured for 5% O 2 in the SF 6 /O 2 plasma mixture, which was found to be well-correlated with the porosity of the Si nanostructures.

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“…These pores depend on the initial morphology of the noble metal coverage. 1,20 The reaction can be described as two halfcell reactions: 21 Cathode reaction:…”

Section: Metal-assisted Chemical Etchingmentioning

confidence: 99%