2012
DOI: 10.2494/photopolymer.25.125
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Block Copolymer Orientation Control Using a Top-Coat Surface Treatment

Abstract: Directed self-assembly of Si containing block copolymers (BCP) is a candidate for next generation patterning technology because it enables both high resolution and high etch contrast. Achieving high resolution requires a high χ parameter. However, it is often difficult to achieve perpendicular patterns by thermal annealing of BCPs with a lower surface energy block, which tends to align with the air interface. New top surface treatment materials that provide a surface energy between those of the blocks have bee… Show more

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Cited by 16 publications
(19 citation statements)
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“…In recent work, this challenge was addressed specifically for block copolymers based on poly(4-trimethylsilylstyrene), PTMSS, by designing a polarity-switching top-coat that tailors the interfacial energy at the top of the film to induce perpendicular orientation of the domains. [13][14][15][16] Conventional DSA relies on chemical patterns to guide the self-assembly of BCPs. [17][18][19][20] Scaling DSA below 20 nm pitch involves much more than just a higher χ BCP; the fabrication of the 4 chemical contrast pattern presents resolution challenges.…”
Section: Introductionmentioning
confidence: 99%
“…In recent work, this challenge was addressed specifically for block copolymers based on poly(4-trimethylsilylstyrene), PTMSS, by designing a polarity-switching top-coat that tailors the interfacial energy at the top of the film to induce perpendicular orientation of the domains. [13][14][15][16] Conventional DSA relies on chemical patterns to guide the self-assembly of BCPs. [17][18][19][20] Scaling DSA below 20 nm pitch involves much more than just a higher χ BCP; the fabrication of the 4 chemical contrast pattern presents resolution challenges.…”
Section: Introductionmentioning
confidence: 99%
“…A number of such silicon-containing BCPs have been reported together with detailed demonstrations of their performance and promise. These include polystyrene- block -polydimethylsiloxane, polydimethylsiloxane- block -polylactide, , polydimethylsiloxane- block- poly­(methyl methacrylate), polylactide- block -polydimethylsiloxane- block -polylactide, polystyrene- block -poly­(4-trimethylsilylstyrene)- block -polystyrene, , polystyrene- block -poly­(4-trimethylsilylstyrene), polystyrene- block -poly­(4-pentamethyldisilylstyrene), poly­(4-methoxystyrene)- block -poly­(4-trimethylsilylstyrene), , poly­(4-methoxystyrene)- block -poly­(4-pentamethyldisilylstyrene), poly­(4-trimethylsilylstyrene)- block -polylactide, , polystyrene- block -polytrimethylsilylisoprene, and poly­(3,4-methylenedioxystyrene)- block -poly­(4-pentamethyldisilylstyrene) …”
Section: Introductionmentioning
confidence: 99%
“…For example, the lower surface energy of inorganic blocks can make it necessary to increase the number of etching steps for the pattern transfer due to the presence of preferential wetting layers at both air/polymer and substrate/polymer interfaces [ 92 ]. High-χ BCPs usually present low tolerance to high temperatures and tend to organize differently on the substrate surface than at the air surface, commonly requiring solvent annealing [ 93 , 94 , 95 ] or an overcoat of polymer to assure structures are standing up in the final BCP film [ 84 , 96 , 97 ].…”
Section: Principles Of the Dsa Of Block Copolymersmentioning
confidence: 99%