Blocking Characteristics of Photoconductive Switches Based on Semi-Insulating GaP and GaN

Abstract

This article presents results of research work aimed at manufacturing photoconductive semiconductor switches (PCSSs) based on semi-insulating (SI) gallium phosphide (GaP) and gallium nitride (GaN). Currently, the work is in progress to determine the optimal values of PCSS parameters. In this article, the parameters of the selected semiconductor materials used for making PCSSs, the device operation principle, and possible areas of use are presented. The paper demonstrates the construction of test PCSSs based on SI GaP and SI GaN and results of blocking characteristics measurements without the illumination, as well as with illumination with a small photon flux. Further research directions are presented also.

Metrology and Measurement Systems

“…6a). The calculations were made for the temperature 300 K. Based on the data presented in the figure, a significant increase in the resistivity of the material can be observed from 2.52 × 10 2 to 1.36 × 10 13 Ωcm with an increase in N S A concentration from 0.9 to 1.1 × 10 15 cm −3 . For an N S A concentration of 3.9 × 10 15 cm −3 , the resistivity reaches the maximum value of ∼ 8 × 10 15 Ωcm.…”

“…This method has previously been used to study the effect of laser power on changes in photoconductivity of the 4H-SiC material and was described in [12]. Defect centers concentration is important from the point of view of insulation properties of a PCSS in the blocking state [13]. As a result of simulation calculations, the influence of defect centers concentration on the 4H-SiC and GaP resistivity was determined.…”