Low Specific Contact Resistivity of 10<sup>−3</sup>Ω·cm<sup>2</sup> for Ti/Al/Ni/Au Multilayer Metals on SI-GaN:Fe Substrate

Yang, Xianghong; Hu, Long; Dang, Xin; Li, Xin; Liu, Weihua; Han, Chuanyu; Li, Song

doi:10.1109/ted.2022.3201784

Cited by 8 publications

(2 citation statements)

References 63 publications

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“…Consequently, high-quality ohmic contacts are helpful in achieving GaN-based HEMTs with high current densities, high extrinsic gain, and low Joule heating loss to allow high-temperature operation [228]. For conventional ohmic contacts by solid-phase reactions between the metal and (Al)GaN, Ta/Al/Ni/Au, Ti/Al/Ni/Au, Ti/Al/Ti/Au, Ti/Al/ Mo/Au, and Ti/Al/Pt/Au multiple metallisations are commonly used to fabricate low resistance Au-based ohmic contacts for AlGaN/GaN HEMTs [231][232][233][234][235]. However, Au acts as a deep-level contaminant with high diffusivity into the Si [236].…”

Section: Ohmic Contacts Technologymentioning

confidence: 99%

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Wu¹,

Xing²,

Li³

et al. 2023

Semicond. Sci. Technol.

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Conventional silicon (Si)-based power devices face physical limitations—such as switching speed and energy efficiency—which can make it difficult to meet the increasing demand for high-power, low-loss, and fast-switching-frequency power devices in power electronic converter systems. Gallium nitride (GaN) is an excellent candidate for next-generation power devices, capable of improving the conversion efficiency of power systems owing to its wide band gap, high mobility, and high electric breakdown field. Apart from their cost effectiveness, GaN-based power high-electron-mobility transistors (HEMTs) on Si substrates exhibit excellent properties—such as low ON-resistance and fast switching—and are used primarily in power electronic applications in the fields of consumer electronics, new energy vehicles, and rail transit, amongst others. During the past decade, GaN-on-Si power HEMTs have made major breakthroughs in the development of GaN-based materials and device fabrication. However, the fabrication of GaN-based HEMTs on Si substrates faces various problems—for example, large lattice and thermal mismatches, as well as ‘melt-back etching’ at high temperatures between GaN and Si, and buffer/surface trapping induced leakage current and current collapse. These problems can lead to difficulties in both material growth and device fabrication. In this review, we focused on the current status and progress of GaN-on-Si power HEMTs in terms of both materials and devices. For the materials, we discuss the epitaxial growth of both a complete multilayer HEMT structure, and each functional layer of a HEMT structure on a Si substrate. For the devices, breakthroughs in critical fabrication technology and the related performances of GaN-based power HEMTs are discussed, and the latest development in GaN-based HEMTs are summarised. Based on recent progress, we speculate on the prospects for further development of GaN-based power HEMTs on Si. This review provides a comprehensive understanding of GaN-based HEMTs on Si, aiming to highlight its development in the fields of microelectronics and integrated circuit technology.

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Section: Ohmic Contacts Technologymentioning

confidence: 99%

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Wu¹,

Xing²,

Li³

et al. 2023

Semicond. Sci. Technol.

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“…It was found that, though the transmittance (reflectance) of PCSSs with ARC (RC) was improved significantly at room temperature, they showed poor thermal stability. However, the rapid thermal annealing process at a temperature of about 850 °C is essential to promote the alloying of metal electrodes of PCSS, 20) thus degrading the performance of ARC and RC. To relieve this problem, the influence of thermal annealing on the properties of TiO 2 and SiO 2 was carefully studied, and the phase transition of TiO 2 from an amorphous state to an anatase structure at high temperatures was found to be responsible for the poor thermal stability of ARC and RC.…”

mentioning

confidence: 99%

Investigation on the thermal stability of reflective and anti-reflective coatings on freestanding GaN

Sun¹,

Wang²,

Hu³

et al. 2023

Appl. Phys. Express

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The reflective (RC) and anti-reflective coatings (ARC) on freestanding GaN were fabricated using a stack of TiO2/SiO2 multi-layers, which changes the reflectance at 532 nm from 17.0% to 2.5% and 99.6% respectively and proves the effectiveness of RC and ARC. The reflection spectra of annealed RC and ARC both show a blueshift of about 52 nm after high temperature annealing, because of the phase transition of TiO2 from amorphism to anatase at high temperature. In order to improve the thermal stability of RC and ARC, we could increase the thickness of TiO2 and SiO2 proportionally during the coating process.

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Improving the Manufacturability of Low-Temperature GaN Ohmic Contact by Blocking the Fluorine Ion Injection

Liu,

Li,

Han

et al. 2024

IEEE J. Electron Devices Soc.

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Low Specific Contact Resistivity of 10⁻³Ω·cm² for Ti/Al/Ni/Au Multilayer Metals on SI-GaN:Fe Substrate

Cited by 8 publications

References 63 publications

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Investigation on the thermal stability of reflective and anti-reflective coatings on freestanding GaN

Improving the Manufacturability of Low-Temperature GaN Ohmic Contact by Blocking the Fluorine Ion Injection

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Low Specific Contact Resistivity of 10−3Ω·cm2 for Ti/Al/Ni/Au Multilayer Metals on SI-GaN:Fe Substrate

Cited by 8 publications

References 63 publications

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices

Investigation on the thermal stability of reflective and anti-reflective coatings on freestanding GaN

Improving the Manufacturability of Low-Temperature GaN Ohmic Contact by Blocking the Fluorine Ion Injection

Contact Info

Product

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Low Specific Contact Resistivity of 10⁻³Ω·cm² for Ti/Al/Ni/Au Multilayer Metals on SI-GaN:Fe Substrate