Blue and green InGaN semiconductor lasers as light sources for displays

Nakatsu, Yoshitaka; Nagao, Yoji; Hirao, T.; Hara, Yoshihiro; Masui, Shingo; Yanamoto, Tomoya; Nagahama, Shin–ichi

doi:10.1117/12.2541710

Cited by 34 publications

(23 citation statements)

References 7 publications

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“…A 532 nm green LD with a higher output power of 2 W was reported in 2017 on free-standing semipolar GaN substrates [190]. State-of-the-art green LDs with emission wavelengths of 525 nm and 532 nm reportedly have an optical output power ranging from 1.2 to 1.8 W, with WPEs of 18-21% [192,205]. Wall plug efficiency values of some of the reported high-performance green LDs are compared with the WPE values of blue LDs in Figure 9a.…”

Section: Nitride-based Long-wavelength Laser Diodesmentioning

confidence: 99%

III-Nitride Light-Emitting Devices

et al. 2021

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III-nitride light-emitting devices have been subjects of intense research for the last several decades owing to the versatility of their applications for fundamental research, as well as their widespread commercial utilization. Nitride light-emitters in the form of light-emitting diodes (LEDs) and lasers have made remarkable progress in recent years, especially in the form of blue LEDs and lasers. However, to further extend the scope of these devices, both below and above the blue emission region of the electromagnetic spectrum, and also to expand their range of practical applications, a number of issues and challenges related to the growth of materials, device design, and fabrication need to be overcome. This review provides a detailed overview of nitride-based LEDs and lasers, starting from their early days of development to the present state-of-the-art light-emitting devices. Besides delineating the scientific and engineering milestones achieved in the path towards the development of the highly matured blue LEDs and lasers, this review provides a sketch of the prevailing challenges associated with the development of long-wavelength, as well as ultraviolet nitride LEDs and lasers. In addition to these, recent progress and future challenges related to the development of next-generation nitride emitters, which include exciton-polariton lasers, spin-LEDs and lasers, and nanostructured emitters based on nanowires and quantum dots, have also been elucidated in this review. The review concludes by touching on the more recent topic of hexagonal boron nitride-based light-emitting devices, which have already shown significant promise as deep ultraviolet and single-photon emitters.

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Section: Nitride-based Long-wavelength Laser Diodesmentioning

confidence: 99%

III-Nitride Light-Emitting Devices

et al. 2021

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“…The selected 385 mA current, which corresponds to a current density of 2.566 kA/cm 2 , is not that high for GaN-based devices. As in [45], the threshold current of a high-power GaN blue laser is 300 mA. Additionally, characterizing the SLD-based laser at various injection currents is out of the scope of this work; however, it would generally follow the results of Figs.…”

Section: Single-wavelength Laser Using An External Mirrormentioning

confidence: 93%

Single-Port Superluminescent-Diode Gain-Chip for Tunable Single-Wavelength and Dual-Wavelength Blue-Laser

et al. 2021

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“…In particular, the V-pits produce epitaxy that suppresses diffusion of charged carriers into the non-radiative recombination centers formed at threading dislocations [114,115]. Despite the green LED efficiency improvements mentioned above and the recent development of Watt-class 532 nm laser diodes by Nichia, as well as 530 nm and 465 nm laser diodes on semipolar substrates by Sony and Toyoda Gosei with peak wall-plug-efficiencies of ∼19%, ∼18%, and ∼37% respectively [116,117], efficient true-green (555 nm) laser diodes have yet to be demonstrated. Devices with emission near the true-green color are essential to matching the peak sensitivity of human photopic vision, and thereby achieving the highest possible luminous intensity and efficacy.…”

Section: State-of-the-art Devices and Applicationsmentioning

confidence: 99%

Group-III-nitride and halide-perovskite semiconductor gain media for amplified spontaneous emission and lasing applications

Ng¹,

Holguín‐Lerma²,

Kang³

et al. 2021

J. Phys. D: Appl. Phys.

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Group-III-nitride optical devices are conventionally important for displays and solid-state lighting, and recently have garnered much interest in the field of visible-light communication. While visible-light laser technology has become mature, developing a range of compact, small footprint, high optical power components for the green-yellow gap wavelengths still requires material development and device design breakthroughs, as well as hybrid integration of materials to overcome the limitations of conventional approaches. The present review focuses on the development of laser and amplified spontaneous emission (ASE) devices in the visible wavelength regime using primarily group-III-nitride and halide-perovskite semiconductors, which are at disparate stages of maturity. While the former is well established in the violet-blue-green operating wavelength regime, the latter, which is capable of solution-based processing and wavelength-tunability in the green-yellow-red regime, promises easy heterogeneous integration to form a new class of hybrid semiconductor light emitters. Prospects for the use of perovskite in ASE and lasing applications are discussed in the context of facile fabrication techniques and promising wavelength-tunable light-emitting device applications, as well as the potential integration with group-III-nitride contact and distributed Bragg reflector layers, which is promising as a future research direction. The absence of lattice-matching limitations, and the presence of direct bandgaps and excellent carrier transport in halide-perovskite semiconductors, are both encouraging and thought-provoking for device researchers who seek to explore new possibilities either experimentally or theoretically. These

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Blue and green InGaN semiconductor lasers as light sources for displays

Cited by 34 publications

References 7 publications

III-Nitride Light-Emitting Devices

III-Nitride Light-Emitting Devices

Single-Port Superluminescent-Diode Gain-Chip for Tunable Single-Wavelength and Dual-Wavelength Blue-Laser

Group-III-nitride and halide-perovskite semiconductor gain media for amplified spontaneous emission and lasing applications

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