Blue emission and Raman scattering spectrum from AlN nanocrystalline powders

Synthesis and optical properties of aluminum nitride nanowires prepared by arc discharge method

“…Six signals at 248.3 cm −1 , 612.2 cm −1 , 656.3 cm −1 , 668.8 cm −1 899.6 cm −1 and 907.9 cm −1 are indexed to the E 2 (low), A 1 (TO), E 2 (high), E 1 (TO), A 1 (LO), and E 1 (LO) phonon modes, respectively, which are signatures for wurtzite AlN as reported previously for bulk and film structure [22,23]. Two characteristic peaks assigned to the lattice vibration modes A 1 (TO) and E 2 (high) are usually employed to analyze the stress state information and nanosize effects of AlN nanocrystal [16,24]. The frequency of symmetric and strong E 2 (high) phonon mode at 656.3 cm −1 is comparable with that observed in the bulk AlN crystal (656 cm −1 ) [23], while the A 1 (TO) phonon mode at 612.2 cm −1 appears a little asymmetric.…”

Catalyst-free synthesis, morphology evolution and optical property of one-dimensional aluminum nitride nanostructure arrays

“…Ref. [34] attributed the emission to the nitrogen vacancy and the radioactive recombination of a photo-generated hole with an electron occupying the nitrogen vacancy. The oxygen impurity [22,34] is thought to be another possible reason for the band because a trace amount of oxygen impurity was always detected in our samples.…”

Photoluminescence Studies of Aluminum Nitride Nanowires

“…Also, the blue emission in AlN can be ascribed to the transition from the shallow level of V N to the ground state of the deep level of the V 3− Al -3xO + N defect complexes, while transition to the excited states of the deep level can result in the phonon structure [2]. It was revealed that V [2]. By comparing Fig.…”

“…The green emission in AlN is known to be attributed to the N deficiency or vacancy [8], in which the radiative recombination of a photon-generated hole with an electron occupying the N deficiency is involved in the process. Also, the blue emission in AlN can be ascribed to the transition from the shallow level of V N to the ground state of the deep level of the V 3− Al -3xO + N defect complexes, while transition to the excited states of the deep level can result in the phonon structure [2]. It was revealed that V [2].…”

“…In recent years, several researchers have reported the photoluminescence (PL) properties of nanocrystalline AlN and suggested that the efficient visible luminescence of nanocrystalline wurtzite AlN in the 2-4 eV region makes it promising materials for light-emitting applications [2,3]. However, there has been rare report on the properties and associated mechanisms of PL emission.…”