Synthesis of one-dimensional AlN nanostructures commonly requires high process temperatures ͑Ͼ900°C͒, metal catalyst, and hazardous gas/powder precursors. We report on a simple, single-step, catalyst-free, plasma-assisted growth of dense patterns of size-uniform single-crystalline AlN nanorods at a low substrate temperature ͑ϳ650°C͒ without any catalyst or hazardous precursors. This unusual growth mechanism is based on highly effective plasma dissociation of N 2 molecules, localized species precipitation on AlN islands, and reduced diffusion on the nitrogen-rich surface. This approach can also be used to produce other high-aspect-ratio oxide and nitride nanostructures for applications in energy conversion, sensing, and optoelectronics.