2010
DOI: 10.1016/j.jallcom.2010.05.021
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Catalyst-free synthesis, morphology evolution and optical property of one-dimensional aluminum nitride nanostructure arrays

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Cited by 20 publications
(15 citation statements)
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“…Fig. 6 presents the PL spectrum of the AlN nanobelts, which has a broad emission band centered at 488 nm (2.54 ev) similar to the PL spectra of AlN nanocones and nanoflowers [20,21,28]. The direct band gap emission of the AlN nanobelts is not seen here duo to the detection limitation.…”
Section: Resultsmentioning
confidence: 75%
See 1 more Smart Citation
“…Fig. 6 presents the PL spectrum of the AlN nanobelts, which has a broad emission band centered at 488 nm (2.54 ev) similar to the PL spectra of AlN nanocones and nanoflowers [20,21,28]. The direct band gap emission of the AlN nanobelts is not seen here duo to the detection limitation.…”
Section: Resultsmentioning
confidence: 75%
“…Some one-dimensional AlN nanostructures with unique optical and field-emission properties have been reported in the past several years. AlN nanocone and nanocolumn arrays have been synthesized by Hu et al and our group [20,21]. Tang et al synthesized AlN nanobelt arrays by an oxide-assisted vapor transport and condensation method at a relatively low temperature, and found that Fe 2 O 3 is critical for growing the aligned AlN nanobelts [9].…”
Section: Introductionmentioning
confidence: 99%
“…As an important member of the group III-nitride semiconductors, aluminum nitride (AlN) has stimulated explosive research interest in the past decades due to its outstanding physical and chemical properties, such as a wide direct band gap of 6.2 eV at room temperature, small or even negative electron affinity (≤ 0.6 eV), low work function (3.7 eV), as well as its appealing good mechanical properties, excellent thermal conductivity, chemical stability, and so on [1][2][3][4][5].…”
Section: Introductionmentioning
confidence: 99%
“…7,21 This is attributed to the inherent strain induced by the lattice mismatch between the AlN and the Si substrate. 7,21 This is attributed to the inherent strain induced by the lattice mismatch between the AlN and the Si substrate.…”
mentioning
confidence: 99%
“…Thus, intense electronimpact reactions lead to a high dissociation degree of N 2 molecules. 4,21,31 In addition, the electric field lines in the plasma sheath converge near the sharper nanohillocks on the surface and drive positive ions to directly deposit closer to their tips, which provide an additional impetus for the formation of 1D AlN nanorods. The outstanding dissociation ability of nonequilibrium low-temperature plasmas is widely used for the synthesis of a variety of metal oxide nanostructures.…”
mentioning
confidence: 99%